Loading...

SMMJT350T1G

Onsemi

SMMJT350T1G by Onsemi

SMMJT350T1G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 2.75W power dissipation. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and -55 °C to 150°C operating temperature range.

Median Price

$1.070

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,808 parts In-Stock

1+ parts

$1.070

100+ parts

$0.438

1k+ parts

$0.235

10k+ parts

$0.224

9,808

$1.070

$0.438

$0.235

$0.224

DigiKey

USA . 973 parts In-Stock

1+ parts

$1.070

100+ parts

$0.438

1k+ parts

$0.338

10k+ parts

-

973

$1.070

$0.438

$0.338

-

Flip Electronics (Authorized)

USA . 81,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81,000

-

-

-

-

Rochester

USA . 900 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

900

-

$0.277

$0.230

$0.205

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,328 parts In-Stock

1+ parts

$0.216

100+ parts

-

1k+ parts

-

10k+ parts

-

2,328

$0.216

-

-

-

Vyrian

USA . 538 parts In-Stock

1+ parts

$0.219

100+ parts

-

1k+ parts

-

10k+ parts

-

538

$0.219

-

-

-

Flip Electronics

USA . 81,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81,000

-

-

-

-

Chip Stock

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33,000

-

-

-

-

IBS Electronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.302

10k+ parts

$0.288

30,000

-

-

$0.302

$0.288

NAC Semi

USA . 24,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.430

24,000

-

-

-

$0.430

Greenchips

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

SIE Connect GmbH - GreenChips

Germany . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 498 parts In-Stock

1+ parts

$0.200

100+ parts

-

1k+ parts

-

10k+ parts

-

498

$0.200

-

-

-

Corphita

USA . 2,300 parts In-Stock

1+ parts

$0.204

100+ parts

-

1k+ parts

-

10k+ parts

-

2,300

$0.204

-

-

-

SupplyDigital Components

Austria . 5,525 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,525

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Problanco Electronics

Mexico . 2,191 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,191

-

-

-

-

UHIMA Technologies

Türkiye . 920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

920

-

-

-

-

Kepictronics

USA . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

800

-

-

-

-

TANS Electronics

Latvia . 778 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

778

-

-

-

-

Kulean Microsystems

USA . 349 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

349

-

-

-

-

Overview

Enhance your electronic projects with the SMMJT350T1G by Onsemi, a top-quality PNP small signal bipolar junction transistor. Manufactured by Onsemi, this transistor is perfect for switching applications and offers a maximum collector-emitter voltage of 300V and a peak reflow temperature of 260 °C. With a compact rectangular package design and gull wing terminals, this transistor is easy to install and delivers reliable performance. Trust Onsemi's expertise in semiconductor technology and elevate your designs with the SMMJT350T1G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and reliability, making this product suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easier integration into existing circuit designs that require PNP transistors, offering compatibility and flexibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces component count, making the overall system more efficient and cost-effective.

Transistor Application: SWITCHING

The switching application capability enables fast switching operations, making this transistor ideal for applications where rapid on/off transitions are required.

Surface Mount: YES

The surface mount capability makes installation and assembly easier, saving space on the PCB and allowing for automated manufacturing processes.

Maximum Power Dissipation (Abs): 2.75 W

The high maximum power dissipation rating of 2.75 W ensures that the transistor can handle power fluctuations and operate reliably in various conditions.

Minimum DC Current Gain (hFE): 20

The minimum DC current gain of 20 ensures consistent and stable performance, providing reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C enables the transistor to operate in harsh environments and ensures long-term reliability.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating of 300 V allows the transistor to withstand higher voltage levels, making it suitable for a wide range of applications.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and connection to the PCB, ensuring secure and reliable electrical connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMJT350T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SMMJT350T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 1