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PDTA114EQA,147

Nexperia

PDTA114EQA,147 by Nexperia

Nexperia's PDTA114EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and IC of 0.1A. This small outline transistor has a transition frequency of 180MHz and meets AEC-Q101 and IEC-60134 standards.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 15,000 parts In-Stock

1+ parts

$0.032

100+ parts

$0.030

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$0.027

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15,000

$0.032

$0.030

$0.027

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Distributors (In-Stock)

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Vyrian

USA . 1,914 parts In-Stock

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1,914

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Distributors (Availability)

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AZTECH Wire

Italy . 11,641 parts In-Stock

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$16.590

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11,641

$16.590

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QUARKTWIN TECHNOLOGY LTD

USA . 20,823 parts In-Stock

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20,823

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Continental Prestige Electronics

USA . 18,900 parts In-Stock

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$0.035

18,900

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$0.035

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Supply Digital

USA . 2,876 parts In-Stock

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Overview

Enhance your electronic projects with the PDTA114EQA,147 by Nexperia! This high-quality Small Signal Bipolar Junction Transistor (BJT) offers reliable performance in switching applications. With a built-in resistor and PNP configuration, this transistor provides convenience and efficiency. Its compact design and surface mount capability make it ideal for space-constrained projects. Trust Nexperia's reputation for excellence and innovation to deliver a product that meets your needs. Upgrade your designs today with the PDTA114EQA,147 and experience the difference in quality and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material ensures reliable performance and protection for the transistor.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in high-side switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast response times.

Surface Mount: YES

Suitable for surface mount technology, making it easy to integrate into modern PCB designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB and saves space.

Terminal Form: NO LEAD

Lead-free terminals comply with environmental regulations and ensure reliable connections.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving package design for efficient PCB layout.

Minimum DC Current Gain (hFE): 30

Consistent and stable DC current gain ensures reliable transistor performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low voltage applications with a safety margin for voltage spikes.

Transistor Element Material: SILICON

Silicon-based material for high performance and reliability.

Maximum Collector Current (IC): 0.1 A

Adequate collector current capacity for small signal applications.

Terminal Finish: TIN

Tin finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position for versatile mounting options.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for reliable soldering.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures without damage.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards for quality and performance assurance.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA114EQA,147 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTA114EQA,147 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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