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PDTD114EU,135

NXP Semiconductors

PDTD114EU,135 by NXP Semiconductors

NXP Semiconductors PDTD114EU,135 is a NPN BJT transistor with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 225MHz. This small outline package with gull wing terminals is ideal for surface mount designs in automotive and industrial electronics.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30,287 parts In-Stock

1+ parts

$0.038

100+ parts

$0.035

1k+ parts

$0.032

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30,287

$0.038

$0.035

$0.032

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Distributors (In-Stock)

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Digiode

USA . 82 parts In-Stock

1+ parts

$0.036

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82

$0.036

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Vyrian

USA . 4,079 parts In-Stock

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4,079

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Anansix

USA . 2,089 parts In-Stock

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2,089

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Distributors (Availability)

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Corphita

USA . 634 parts In-Stock

1+ parts

$0.034

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634

$0.034

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AZTECH Wire

Italy . 1,200 parts In-Stock

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$9.880

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1,200

$9.880

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Continental Prestige Electronics

USA . 30,287 parts In-Stock

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$0.041

30,287

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$0.041

QUARKTWIN TECHNOLOGY LTD

USA . 24,875 parts In-Stock

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24,875

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UNI Independent Distributors

Spain . 5,759 parts In-Stock

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5,759

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Overview

Discover the power of the PDTD114EU,135 by NXP Semiconductors, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that delivers reliable performance and efficiency. With a single configuration and built-in resistor, this NPN transistor is perfect for switching applications. The GULL WING terminal form and compact package shape make it easy to install in a variety of devices. Trust in NXP Semiconductors' reputation for quality and innovation as you experience the benefits of this high-quality transistor. Upgrade your electronics with the PDTD114EU,135 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

Commonly used type of transistor which allows for easy integration in circuits and designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design and saves space by including a built-in resistor.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and efficient performance.

Surface Mount: YES

Easy to integrate into surface mount technology applications for compact and efficient designs.

Package Shape: RECTANGULAR

Offers a standard shape that is easy to handle and mount in various applications.

Terminal Form: GULL WING

Enables easy soldering and mounting on PCBs for quick and reliable connections.

No. of Terminals: 3

Provides essential connections for the transistor to function properly in a circuit.

Package Style (Meter): SMALL OUTLINE

Compact design allows for space-saving and efficient integration in small electronic devices.

Minimum DC Current Gain (hFE): 70

Ensures reliable amplification of current for proper transistor operation.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications where a maximum of 50 V is required.

Transistor Element Material: SILICON

Provides good performance and reliability compared to other semiconductor materials.

Maximum Collector Current (IC): 0.5 A

Capable of handling up to 0.5 A of current, suitable for various electronic circuits and applications.

Terminal Position: DUAL

Provides stable and secure connectivity for the transistor in the circuit.

Reference Standard: AEC-Q101; IEC-60134

Compliant with industry standards for quality, safety, and performance.

Nominal Transition Frequency (fT): 225 MHz

Allows for high-frequency operation, suitable for applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTD114EU,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTD114EU,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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