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Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FMMT411TD by Diodes Incorporated

FMMT411TD

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .9 A;

.9 A

15 pF

15 V

SINGLE

100

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.8 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

40 MHz

.1 V

BC846BM3-TP by Micro Commercial Components

BC846BM3-TP

Micro Commercial Components

BC846BM3-TP by Micro Commercial Components is a Small Signal BJT with hFE of 200, VCE of 65V, and IC of 0.1A. It features Matte Tin finish, withstands peak reflow at 260°C for 10s. Ideal for low-power applications requiring reliable signal amplification.

.1 A

65 V

200

e3

260

MATTE TIN

10

FCX493QTA by Diodes Incorporated

FCX493QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;

COLLECTOR

1 A

10 pF

100 V

SINGLE

20

R-PSSO-F3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SWITCHING

SILICON

150 MHz

.6 V

FCX458QTA by Diodes Incorporated

FCX458QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .225 A;

COLLECTOR

.225 A

5 pF

400 V

SINGLE

15

R-PSSO-F3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

SINGLE

SILICON

50 MHz

.5 V

2SC2655-Y(TE6,F,M) by Toshiba

2SC2655-Y(TE6,F,M)

Toshiba

The 2SC2655-Y(TE6,F,M) by Toshiba is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 2A. It is commonly used for switching applications due to its low VCEsat of 0.5V.

2 A

30 pF

50 V

SINGLE

120

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.9 W

.9 W

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.5 V

RN1101MFV,L3F by Toshiba

RN1101MFV,L3F

Toshiba

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

.7 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

YES

FLAT

DUAL

SWITCHING

SILICON

.3 V

ADTC143XUAQ-7 by Diodes Incorporated

ADTC143XUAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

GULL WING

DUAL

SILICON

250 MHz

ADTA144WCAQ-7 by Diodes Incorporated

ADTA144WCAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA144WCAQ-13 by Diodes Incorporated

ADTA144WCAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA144VCAQ-7 by Diodes Incorporated

ADTA144VCAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 0.21

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA144VCAQ-13 by Diodes Incorporated

ADTA144VCAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 0.21

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.31 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

RN2305,LF by Toshiba

RN2305,LF

Toshiba

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;

BUILT IN BAIS RESISTOR RATIO IS 21.36

.1 A

6 pF

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.1 W

.1 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

DCX144EUQ-7R-F by Diodes Incorporated

DCX144EUQ-7R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

.3 V

BC847W-QF by Nexperia

BC847W-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

BC857BS-QF by Nexperia

BC857BS-QF

Nexperia

BC857BS-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 45V. Package style is small outline with Gull Wing terminals.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

MMBT6427LT3G by Onsemi

MMBT6427LT3G

Onsemi

MMBT6427LT3G by Onsemi is a NPN Darlington transistor with max VCEsat of 1.5V, hFE of 14000, and IC of 0.5A. Ideal for small signal applications in electronics due to its high gain and low saturation voltage. Operates b/w -55 to 150 °C, making it suitable for various temperature environments.

.5 A

7 pF

40 V

DARLINGTON

14000

TO-236

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

YES

GULL WING

DUAL

SILICON

1.5 V

BC857CWQ-13 by Diodes Incorporated

BC857CWQ-13

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.65 V

RN2904,LF by Toshiba

RN2904,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

RN2903,LF by Toshiba

RN2903,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

70

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

RN2902,LF by Toshiba

RN2902,LF

Toshiba

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

6 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

50

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

.2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

.3 V

DDC143XU-13 by Diodes Incorporated

DDC143XU-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

DDC143XU-7 by Diodes Incorporated

DDC143XU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

BC817-16-QVL by Nexperia

BC817-16-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC817-QVL by Nexperia

BC817-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .345 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.345 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC847A-QVL by Nexperia

BC847A-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847B-QVL by Nexperia

BC847B-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

200

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847W-QX by Nexperia

BC847W-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847A-QR by Nexperia

BC847A-QR

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847AW-QX by Nexperia

BC847AW-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC847AW-QF by Nexperia

BC847AW-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1.5 pF

45 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846AW-QX by Nexperia

BC846AW-QX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846AW-QF by Nexperia

BC846AW-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC846W-QF by Nexperia

BC846W-QF

Nexperia

BC846W-QF by Nexperia is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 110, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for small outline packages in automotive and industrial electronics.

.1 A

3 pF

65 V

SINGLE

110

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

PUMD3-QZ by Nexperia

PUMD3-QZ

Nexperia

PUMD3-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, hFE of 30, and can handle a max IC of 0.1A. With a package style of small outline and operating temperatures ranging from -65 to 150°C, it meets AEC-Q101 and IEC-60134 standards.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PUMD3-QH by Nexperia

PUMD3-QH

Nexperia

PUMD3-QH by Nexperia is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.1V, min hFE of 30, and can operate at temperatures up to 150°C. With a package style of small outline and dual terminal position, it offers high performance in a compact design.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.1 V

PBSS2515YPN-QX by Nexperia

PBSS2515YPN-QX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

15 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

420 MHz

.25 V

PUMH2-QF by Nexperia

PUMH2-QF

Nexperia

PUMH2-QF by Nexperia is a NPN BJT with 2 elements, built-in resistor, and 0.15V VCEsat. Ideal for switching applications, it has a max IC of 0.1A, hFE of 80, and operates b/w -65 to 150°C. With a package style of small outline and Gull Wing terminals, it offers high performance in a compact design.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

2.5 pF

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

230 MHz

.15 V

BC857-QVL by Nexperia

BC857-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

125

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857B-QVL by Nexperia

BC857B-QVL

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

220

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857C-QVL by Nexperia

BC857C-QVL

Nexperia

BC857C-QVL by Nexperia is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 420, and IC of 0.1A, it operates in temperatures from -65 to 150°C. This small outline package with Gull Wing terminals has a max VCE of 45V and fT of 100MHz.

.1 A

4.5 pF

45 V

SINGLE

420

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC857A-QR by Nexperia

BC857A-QR

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

4.5 pF

45 V

SINGLE

125

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.65 V

BC846A-QVL by Nexperia

BC846A-QVL

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

.1 A

3 pF

65 V

SINGLE

110

TO-236AB

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.4 V

BC807W-QF by Nexperia

BC807W-QF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .29 W; Maximum Collector Current (IC): .5 A;

.5 A

5 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC817-16W-QF by Nexperia

BC817-16W-QF

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .29 W; Maximum Collector Current (IC): .5 A;

.5 A

3 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC817-40W-QF by Nexperia

BC817-40W-QF

Nexperia

BC817-40W-QF by Nexperia is a NPN BJT transistor for switching applications. With VCEsat of 0.7V, hFE of 250, and IC of 0.5A, it operates at temperatures from -65 to 150°C. This small outline package with Gull Wing terminals has a max fT of 100MHz and is ideal for AEC-Q101 automotive standards.

.5 A

3 pF

45 V

SINGLE

250

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC807-16W-QF by Nexperia

BC807-16W-QF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .29 W; Maximum Collector Current (IC): .5 A;

.5 A

5 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.7 V

BC817-25W-QF by Nexperia

BC817-25W-QF

Nexperia

Nexperia's BC817-25W-QF is a NPN BJT transistor for switching applications. With VCEsat of 0.7V, hFE of 160, and IC of 0.5A, it operates up to 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs in automotive electronics meeting AEC-Q101 standards.

.5 A

3 pF

45 V

SINGLE

160

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V

BC817W-QF by Nexperia

BC817W-QF

Nexperia

BC817W-QF by Nexperia is a NPN transistor for switching applications. With a VCEsat of 0.7V, it has a max IC of 0.5A and hFE of 100. Operating temperature ranges from -65 to 150°C, making it suitable for various electronic devices.

.5 A

3 pF

45 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.29 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.7 V