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BC846W-QF

Nexperia

BC846W-QF by Nexperia

BC846W-QF by Nexperia is a NPN BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 110, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for small outline packages in automotive and industrial electronics.

Median Price

$0.016

Lifecycle Status

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1k+

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Arrow

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AZTECH Wire

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Overview

Enhance your electronic designs with the BC846W-QF by Nexperia - a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Nexperia, a trusted leader in semiconductor solutions, this NPN transistor is perfect for switching applications, delivering a maximum VCEsat of 0.4V and a minimum DC current gain of 110. With its compact design, gull wing terminals, and high operating temperature range, this transistor provides value and versatility for a wide range of electronics projects. Trust Nexperia for superior quality and performance in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for portable or small devices.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications.

Configuration: SINGLE

Simplified design for ease of use.

Transistor Application: SWITCHING

Efficient switching capabilities for various electronic circuits.

Surface Mount: YES

Easy and convenient installation on PCBs.

Maximum VCEsat: 0.4 V

Low saturation voltage for minimal power loss.

Package Shape: RECTANGULAR

Space-saving design for compact applications.

Terminal Form: GULL WING

Secure and reliable solder connection.

No. of Terminals: 3

Simple and straightforward connectivity.

Maximum Power Dissipation (Abs): 0.2 W

Efficient power handling capability.

Package Style (Meter): SMALL OUTLINE

Small form factor for space-constrained environments.

Minimum DC Current Gain (hFE): 110

Consistent and reliable amplification performance.

Maximum Operating Temperature: 150 °C

Suitable for high temperature environments.

Maximum Collector-Base Capacitance: 3 pF

Low capacitance for improved high-frequency performance.

Maximum Collector-Emitter Voltage: 65 V

Suitable for various voltage requirements.

Transistor Element Material: SILICON

High-quality material for reliable transistor performance.

Minimum Operating Temperature: -65 °C

Wide temperature range for versatile use.

Maximum Collector Current (IC): 0.1 A

Sufficient current handling capacity for small signal applications.

Terminal Position: DUAL

Allows for easy connectivity in various circuit configurations.

Reference Standard: AEC-Q101; IEC-60134

Compliant with industry standards for quality and performance.

Nominal Transition Frequency (fT): 100 MHz

High frequency capability for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC846W-QF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

BC846W-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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