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BC857C-QVL

Nexperia

BC857C-QVL by Nexperia

BC857C-QVL by Nexperia is a PNP BJT transistor for switching applications. With a VCEsat of 0.65V, hFE of 420, and IC of 0.1A, it operates in temperatures from -65 to 150°C. This small outline package with Gull Wing terminals has a max VCE of 45V and fT of 100MHz.

Median Price

$0.018

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Rochester

USA . 5,010,000 parts In-Stock

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$0.027

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Verical

USA . 4,370,000 parts In-Stock

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Future Electronics

Canada . 20,000 parts In-Stock

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$0.009

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Nova Conductors

Japan . 550 parts In-Stock

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$0.033

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Chip Stock

USA . 102,000 parts In-Stock

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IBS Electronics

USA . 20,000 parts In-Stock

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Vyrian

USA . 6,611 parts In-Stock

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VNN

France . 885 parts In-Stock

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TME

Poland . 24 parts In-Stock

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Ampacity Inc.

Singapore . 2,133,257 parts In-Stock

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$0.009

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Aranea Global

USA . 50 parts In-Stock

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AZTECH Wire

Italy . 9,260 parts In-Stock

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Eastek

USA . 5,620,000 parts In-Stock

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GreenTree Electronics

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Supply Digital

USA . 316 parts In-Stock

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Overview

Discover the unmatched quality and reliability of the BC857C-QVL by Nexperia, a leading manufacturer in small signal bipolar junction transistors (BJTs). This PNP transistor is perfect for switching applications, offering a maximum VCEsat of 0.65V and a minimum DC current gain of 420. With a compact rectangular package shape and gull wing terminals, this transistor is ideal for surface mount applications. Trust Nexperia's innovative technology and superior design to deliver top-notch performance and efficiency. Upgrade your projects with the BC857C-QVL and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for switching circuits.

Configuration: SINGLE

Single configuration makes it easy to use in simple circuits without additional complexity.

Transistor Application: SWITCHING

Designed for switching applications, which is a critical function in many electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and reducing manufacturing costs.

Maximum VCEsat: 0.65 V

Low VCEsat value minimizes power loss in the transistor during operation, increasing efficiency.

Package Shape: RECTANGULAR

Rectangular package shape is standardized and easy to handle during assembly and mounting.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections and ease of PCB mounting.

No. of Terminals: 3

Three terminals offer basic connections for common transistor configurations.

Maximum Power Dissipation (Abs): 0.25 W

Low power dissipation allows for operation within safe thermal limits, enhancing reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact design.

Minimum DC Current Gain (hFE): 420

High DC current gain ensures consistent and reliable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for operation in a wide range of environmental conditions.

Maximum Collector-Base Capacitance: 4.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides a wide voltage margin for safe operation in various circuits.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and reliability for long-term performance.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows for use in extreme cold environments without performance degradation.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate power levels in typical switching applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit configuration and connection options.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability for automotive and general electronic applications.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows for fast switching speeds and high-frequency performance in signal processing circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857C-QVL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC857C-QVL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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