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2SC2655-Y(TE6,F,M)

Toshiba

2SC2655-Y(TE6,F,M) by Toshiba

The 2SC2655-Y(TE6,F,M) by Toshiba is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 2A. It is commonly used for switching applications due to its low VCEsat of 0.5V.

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Sensible Micro Corp

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 477 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Overview

Experience high-quality performance with the 2SC2655-Y(TE6,F,M) by Toshiba. As a leading manufacturer in the industry, Toshiba ensures top-notch products that deliver exceptional results. This small signal bipolar junction transistor (BJT) is perfect for switching applications, offering maximum VCEsat of 0.5V and a minimum DC current gain (hFE) of 120. With its NPN polarity and single configuration, this product guarantees optimal functionality. Whether you're looking to enhance your electronic devices or improve your automation systems, the 2SC2655-Y(TE6,F,M) provides unparalleled value, benefits, and advantages to meet your needs. Upgrade your technology today with Toshiba's trusted expertise.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for switching applications, making this transistor versatile for a wide range of electronic circuits.

Maximum VCEsat: 0.5 V

With a low maximum VCEsat value of 0.5 V, this transistor can switch on and off quickly, making it efficient for switching applications.

Minimum DC Current Gain (hFE): 120

The high minimum DC current gain value of 120 ensures that the transistor amplifies input signals effectively, providing reliable performance in circuits.

Maximum Power Dissipation (Abs): 0.9 W

The high maximum power dissipation value of 0.9 W allows the transistor to handle power efficiently, making it suitable for high-power applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50 V, this transistor can withstand higher voltages, providing greater flexibility in circuit design.

Maximum Collector Current (IC): 2 A

The high maximum collector current of 2 A allows the transistor to handle high currents, making it suitable for applications that require robust performance.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates that the transistor can operate at high frequencies, making it suitable for applications that require fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2655-Y(TE6,F,M) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.9 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

2SC2655-Y(TE6,F,M) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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