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BC857BS-QF

Nexperia

BC857BS-QF by Nexperia

BC857BS-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 45V. Package style is small outline with Gull Wing terminals.

Median Price

$0.027

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 600,000 parts In-Stock

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$0.027

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$0.022

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$0.027

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$0.020

EBV Elektronik

Germany . 30,000 parts In-Stock

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Arrow

USA . 10,000 parts In-Stock

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$0.032

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Verical

USA . 10,000 parts In-Stock

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$0.027

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Nova Conductors

Japan . 32 parts In-Stock

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$0.057

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Chip Stock

USA . 125,000 parts In-Stock

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VNN

France . 26,068 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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Vyrian

USA . 2,634 parts In-Stock

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Ampacity Inc.

Singapore . 314,831 parts In-Stock

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$0.017

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Semicontronic

India . 314,702 parts In-Stock

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Argo Parts USA

USA . 2,964 parts In-Stock

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$0.055

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Netroflash

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,728 parts In-Stock

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Corohmni

South Africa . 21 parts In-Stock

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$0.987

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Aztec Data Supply Inc.

USA . 18,314 parts In-Stock

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$1.010

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AZTECH Wire

Italy . 13,536 parts In-Stock

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$21.210

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Eastek

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GreenTree Electronics

Israel . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,811 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

USA . 2,734 parts In-Stock

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Overview

Enhance your electronic projects with the BC857BS-QF by Nexperia, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by industry leader Nexperia, this PNP transistor is perfect for switching applications and offers a maximum VCEsat of just 0.4V, ensuring efficient power usage. With a small outline package and dual terminal position, this transistor is easy to integrate into your designs. Trust Nexperia's reputation for excellence and elevate your projects with the BC857BS-QF today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and resistant to environmental factors, ensuring longevity and reliability.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, expanding the versatility of the product.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of each element, providing flexibility in circuit design.

Transistor Application: SWITCHING

Ideal for switching applications, enabling efficient control of current flow.

Surface Mount: YES

Suitable for automated assembly processes, saving time and cost in production.

Maximum VCEsat: 0.4 V

Low saturation voltage minimizes power loss and heat generation.

Package Shape: RECTANGULAR

Space-saving design and easy integration into circuit layouts.

Terminal Form: GULL WING

Allows for easy soldering onto circuit boards, facilitating assembly.

Maximum Power Dissipation (Abs): 0.3 W

Can handle moderate power levels, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Compact size for high-density PCB layouts, saving space.

Minimum DC Current Gain (hFE): 200

High current gain ensures signal amplification with minimal input power.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Base Capacitance: 2.2 pF

Low capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

Can handle relatively high voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based material provides good performance and reliability in transistor operation.

Minimum Operating Temperature: -65 °C

Can operate in extreme cold environments without performance issues.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, suitable for various circuit designs.

Terminal Position: DUAL

Allows for versatile mounting options and easy connections in circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for efficient soldering during assembly.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Reference Standard: AEC-Q101; IEC-60134

Compliant with industry standards, ensuring quality and reliability in performance.

Nominal Transition Frequency (fT): 100 MHz

High frequency capability for fast switching and amplification in signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857BS-QF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.2 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

BC857BS-QF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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