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BC817W-QF

Nexperia

BC817W-QF by Nexperia

BC817W-QF by Nexperia is a NPN transistor for switching applications. With a VCEsat of 0.7V, it has a max IC of 0.5A and hFE of 100. Operating temperature ranges from -65 to 150°C, making it suitable for various electronic devices.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 120,000 parts In-Stock

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-

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$0.042

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$0.035

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$0.031

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-

$0.042

$0.035

$0.031

Verical

USA . 120,000 parts In-Stock

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$0.039

120,000

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$0.039

Distributors (In-Stock)

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Nova Conductors

Japan . 23 parts In-Stock

1+ parts

$0.048

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23

$0.048

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Chip Stock

USA . 66,000 parts In-Stock

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Vyrian

USA . 6,538 parts In-Stock

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6,538

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VNN

France . 997 parts In-Stock

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997

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Distributors (Availability)

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Ampacity Inc.

Singapore . 119,618 parts In-Stock

1+ parts

$0.019

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119,618

$0.019

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Argo Parts USA

USA . 3,943 parts In-Stock

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$0.048

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$0.047

3,943

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$0.047

Continental Prestige Electronics

USA . 480 parts In-Stock

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$0.048

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$0.047

480

$0.048

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$0.047

Bastille Electronics

Australia . 200 parts In-Stock

1+ parts

$0.048

100+ parts

$0.046

1k+ parts

$0.043

10k+ parts

$0.043

200

$0.048

$0.046

$0.043

$0.043

AZTECH Wire

Italy . 5,421 parts In-Stock

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$16.770

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5,421

$16.770

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 510 parts In-Stock

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510

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Overview

Discover the Nexperia BC817W-QF, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Nexperia, known for their reliable and innovative electronic components, this NPN transistor offers a low VCEsat of 0.7V and a high DC current gain of 100. With a maximum collector-emitter voltage of 45V and a compact gull wing package, the BC817W-QF is ideal for a wide range of electronic projects. Trust in Nexperia's expertise and elevate your designs with this high-performance transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, allowing for easy handling and long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for a variety of electronic circuits that require fast switching speeds.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use and suitable for compact PCB layouts.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in various electronic devices and circuits.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient mounting on a PCB, ideal for modern electronics with compact designs.

Maximum VCEsat: 0.7 V

Low VCEsat value ensures minimal power loss and high efficiency during operation, making it a cost-effective choice for energy-conscious applications.

Package Shape: RECTANGULAR

Rectangular package shape enables easier handling and placement on a PCB, contributing to a more organized and efficient circuit design.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections and facilitate automated assembly processes, ensuring reliable electrical connections.

No. of Terminals: 3

Three terminals offer straightforward connectivity and compatibility with various circuit configurations, simplifying the design process.

Maximum Power Dissipation (Abs): 0.29 W

Low power dissipation ensures efficient operation and helps prevent overheating, maintaining the transistor's performance and longevity.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for dense circuit layouts without compromising performance or reliability.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent and stable amplification of signals, making it suitable for a wide range of signal processing applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance enables reliable performance in various environmental conditions, ensuring versatility and durability.

Maximum Collector-Base Capacitance: 3 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance, making it ideal for fast-switching applications.

Maximum Collector-Emitter Voltage: 45 V

High maximum collector-emitter voltage rating provides protection against voltage spikes and ensures the stability of the transistor in various operating conditions.

Transistor Element Material: SILICON

Silicon material offers reliable and consistent performance characteristics, ensuring the transistor's long-term stability and functionality.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature tolerance allows for reliable performance in extreme cold conditions, making it suitable for diverse environments.

Maximum Collector Current (IC): 0.5 A

High maximum collector current rating offers capacity for handling higher currents, making it suitable for various load requirements in electronic circuits.

Terminal Position: DUAL

Dual terminal position facilitates secure mounting and connection in a circuit, ensuring stability and reliability in various applications.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards guarantees quality and reliability, making it a trusted choice for automotive and general electronic applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast signal switching and amplification, making it suitable for high-frequency applications that require quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817W-QF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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