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PDTB123EU,135

NXP Semiconductors

PDTB123EU,135 by NXP Semiconductors

The NXP Semiconductors PDTB123EU,135 is a PNP BJT with built-in resistor for switching applications. It has a hFE of 40, Vce of 50V, and fT of 140MHz. This small outline transistor features gull wing terminals in a rectangular package suitable for surface mount assembly.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 30,000 parts In-Stock

1+ parts

$0.038

100+ parts

$0.035

1k+ parts

$0.032

10k+ parts

-

30,000

$0.038

$0.035

$0.032

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Avnet

USA . 30,000 parts In-Stock

1+ parts

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30,000

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Distributors (In-Stock)

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Digiode

USA . 4,792 parts In-Stock

1+ parts

$0.036

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4,792

$0.036

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Vyrian

USA . 2,680 parts In-Stock

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2,680

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Anansix

USA . 895 parts In-Stock

1+ parts

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895

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Distributors (Availability)

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Corphita

USA . 4,368 parts In-Stock

1+ parts

$0.034

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4,368

$0.034

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AZTECH Wire

Italy . 568 parts In-Stock

1+ parts

$10.510

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568

$10.510

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Continental Prestige Electronics

USA . 39,549 parts In-Stock

1+ parts

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$0.041

39,549

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$0.041

UNI Independent Distributors

Spain . 1,102 parts In-Stock

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1,102

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Overview

Elevate your electronic projects with the PDTB123EU,135 by NXP Semiconductors. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor boasts a PNP polarity and single configuration with a built-in resistor for seamless switching applications. With its advanced technology and high-quality materials, this transistor offers unparalleled performance and reliability. Whether you're a seasoned engineer or a DIY enthusiast, this product delivers value, efficiency, and endless possibilities for your designs. Upgrade your creations today with the PDTB123EU,135 and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides reliable and durable construction for long-term use.

Polarity or Channel Type: PNP

Suitable for complementary NPN transistors in various electronic circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already incorporating a resistor.

Transistor Application: SWITCHING

Designed for efficient and reliable switching operations.

Surface Mount: YES

Easy to mount on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Simplifies placement and orientation during assembly.

No. of Terminals: 3

Provides necessary connections for proper circuit operation.

Minimum DC Current Gain (hFE): 40

Ensures consistent and stable amplification of signals.

Maximum Collector-Emitter Voltage: 50 V

Allows for operation in a wide range of voltage conditions.

Transistor Element Material: SILICON

Provides high performance and reliability in various applications.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current loads in circuits.

Terminal Position: DUAL

Allows for easy and secure connection to other components.

Reference Standard: AEC-Q101; IEC-60134

Compliant with industry standards for quality and performance.

Nominal Transition Frequency (fT): 140 MHz

Suitable for high-frequency applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTB123EU,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTB123EU,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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