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PDTA143EQA,147

Nexperia

PDTA143EQA,147 by Nexperia

Nexperia's PDTA143EQA,147 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and fT of 180MHz. This transistor has a plastic/epoxy body, is surface mountable, and has tin finish terminals.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 40,000 parts In-Stock

1+ parts

$0.032

100+ parts

$0.030

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$0.027

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$0.032

$0.030

$0.027

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,988 parts In-Stock

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2,988

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Distributors (Availability)

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AZTECH Wire

Italy . 5,551 parts In-Stock

1+ parts

$13.930

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5,551

$13.930

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Continental Prestige Electronics

USA . 40,000 parts In-Stock

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$0.035

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$0.035

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

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Supply Digital

USA . 2,612 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality PDTA143EQA,147 PNP BJT from Nexperia. Designed with a built-in resistor for simplified circuitry, this small signal transistor is perfect for switching applications. With its durable plastic/epoxy body and reliable performance, it ensures consistent operation in various designs. Trust Nexperia's expertise in semiconductor manufacturing to deliver premium components that meet industry standards. Elevate your projects with the value and benefits of the PDTA143EQA,147 - a versatile solution for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification and switching circuits, making this product versatile in its applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components, saving space and cost.

Transistor Application: SWITCHING

Designed for switching applications, ensuring reliable and fast switching performance.

Surface Mount: YES

Allows for easy integration onto PCBs, saving assembly time and enabling compact designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards and compatibility with automated assembly processes.

No. of Terminals: 3

Simple three-terminal design for easy connection and integration within circuits.

Minimum DC Current Gain (hFE): 30

High minimum DC current gain ensures stable and reliable amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring moderate voltage handling capabilities.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate collector currents for various circuit requirements.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal positioning allows for flexibility in circuit configurations and connections.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation and improved thermal performance.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration without compromising functionality.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures for soldering processes without damage.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability in automotive and electronic applications.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency enables fast signal processing and switching speed in applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTA143EQA,147 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PDTA143EQA,147 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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