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MPS2369RLRAG

Onsemi

MPS2369RLRAG by Onsemi

MPS2369RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 20, and fT of 500MHz. Ideal for switching applications due to its single configuration and max. collector-emitter voltage of 15V.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 683 parts In-Stock

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$0.040

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$0.040

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$0.040

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683

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Chip Stock

USA . 24,000 parts In-Stock

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Vyrian

USA . 13,195 parts In-Stock

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Digiode

USA . 1,923 parts In-Stock

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AZTECH Wire

Italy . 698 parts In-Stock

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$17.660

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698

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Perfect Parts

USA . 23,929 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,099 parts In-Stock

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SupplyDigital Components

Austria . 4,743 parts In-Stock

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Kulean Microsystems

USA . 4,671 parts In-Stock

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Problanco Electronics

Mexico . 4,327 parts In-Stock

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TANS Electronics

Latvia . 1,907 parts In-Stock

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Corphita

USA . 1,139 parts In-Stock

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UHIMA Technologies

Türkiye . 578 parts In-Stock

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Corohmni

South Africa . 107 parts In-Stock

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Overview

Looking to enhance your electronic projects with reliable small signal transistors? Look no further than the MPS2369RLRAG by Onsemi. With a reputation for top-notch quality and cutting-edge technology, Onsemi delivers products that exceed customer expectations. Ideal for switching applications, this NPN transistor offers superior performance and durability. Whether you are a hobbyist or a professional, this versatile component provides unmatched value and benefits, making it a must-have for your next project. Experience the difference with the MPS2369RLRAG and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability in various operating conditions.

Polarity or Channel Type: NPN

Suitable for a wide range of applications including amplification and switching due to its versatile characteristics.

Configuration: SINGLE

Simplified design and ease of use in circuits requiring a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in controlling current flow.

Package Shape: ROUND

Facilitates easy mounting and soldering onto circuit boards, making it convenient for assembly.

Terminal Form: THROUGH-HOLE

Allows for secure connection to the circuit board with through-hole mounting, ensuring stability during operation.

No. of Terminals: 3

Provides necessary connections for proper functioning without complexity, enhancing overall circuit efficiency.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling reasonable power levels, suitable for a variety of applications without overheating.

Package Style (Meter): CYLINDRICAL

Compact and space-saving design ideal for applications requiring small form factor components.

Terminal Finish: TIN SILVER COPPER

Enhanced terminal finish ensures reliable and low-resistance connections, contributing to overall performance.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for lead-free soldering processes, meeting RoHS compliance standards.

Nominal Transition Frequency (fT): 500 MHz

High frequency capability enables fast switching and amplification, suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2369RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

18 ns

Maximum Turn On Time (ton):

12 ns

Trade Compliance

MPS2369RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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