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MMBTA70LT1G

Onsemi

MMBTA70LT1G by Onsemi

MMBTA70LT1G by Onsemi is a PNP BJT transistor with 40V VCEO, 0.1A IC, and 125MHz fT. It is ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.225W. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs requiring compact components.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 253,185 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

253,185

-

$0.066

$0.055

$0.049

DigiKey

USA . 253,185 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.080

253,185

-

-

-

$0.080

Verical

USA . 157,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.061

157,000

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-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 396 parts In-Stock

1+ parts

$0.051

100+ parts

-

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396

$0.051

-

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Chip Stock

USA . 70,000 parts In-Stock

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70,000

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Vyrian

USA . 8,194 parts In-Stock

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8,194

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Connector Distribution Corp

USA . 4,800 parts In-Stock

1+ parts

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4,800

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Right Parts Inc.

USA . 4,800 parts In-Stock

1+ parts

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4,800

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,459 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

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1,459

$0.049

-

-

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Corohmni

South Africa . 459 parts In-Stock

1+ parts

$0.054

100+ parts

-

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459

$0.054

-

-

-

Component Stockers USA

USA . 361,218 parts In-Stock

1+ parts

$0.060

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

361,218

$0.060

$0.050

$0.050

$0.050

AZTECH Wire

Italy . 1,187 parts In-Stock

1+ parts

$16.170

100+ parts

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1,187

$16.170

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Kepictronics

USA . 360,000 parts In-Stock

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360,000

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Continental Prestige Electronics

USA . 253,185 parts In-Stock

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$0.049

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253,185

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$0.049

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Perfect Parts

USA . 9,382 parts In-Stock

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9,382

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Problanco Electronics

Mexico . 6,362 parts In-Stock

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6,362

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TANS Electronics

Latvia . 5,572 parts In-Stock

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5,572

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SupplyDigital Components

Austria . 5,561 parts In-Stock

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5,561

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Kulean Microsystems

USA . 4,842 parts In-Stock

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4,842

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UHIMA Technologies

Türkiye . 200 parts In-Stock

1+ parts

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200

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Overview

Experience superior performance with the MMBTA70LT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) like no other. The MMBTA70LT1G offers customers unparalleled value and benefits, making it the perfect choice for a wide range of applications. From its high operating temperature to its reliable transistor element material, this product provides the durability and efficiency you need. Trust Onsemi for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body ensures good durability and protection for the internal components of the transistor.

Polarity or Channel Type: PNP

The PNP polarity allows for easy implementation in circuits that require PNP transistors, making it a versatile choice for various applications.

Configuration: SINGLE

The single configuration simplifies the design and integration of the transistor into circuitry, making it user-friendly for engineers and hobbyists alike.

Surface Mount: YES

The surface mount capability makes it easy to mount and solder onto PCBs, saving space and allowing for efficient placement in compact designs.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation of 0.225 W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures consistent amplification of signals, making this transistor suitable for amplification applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in a wide range of environments and applications.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40 V makes this transistor suitable for low to moderate voltage applications, providing a wide range of usability.

Nominal Transition Frequency (fT): 125 MHz

The high nominal transition frequency of 125 MHz indicates fast switching speeds, making this transistor ideal for high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBTA70LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBTA70LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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