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MPS2369ARLRPG

Onsemi

MPS2369ARLRPG by Onsemi

MPS2369ARLRPG by Onsemi is a NPN BJT transistor with 3 terminals and max power dissipation of 0.36W. It has a min DC current gain of 20, max collector-emitter voltage of 15V, and nominal transition frequency of 500MHz. Ideal for switching applications due to its fast turn on/off times (ton: 12ns, toff: 18ns) and peak reflow temp of 260 °C.

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Digiode

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AZTECH Wire

Italy . 48 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

Latvia . 8,246 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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Corphita

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SupplyDigital Components

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UHIMA Technologies

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Overview

Enhance your electronic projects with the MPS2369ARLRPG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) perfect for switching applications. Manufactured by industry leader Onsemi, this NPN transistor offers reliability and performance. With a maximum collector-emitter voltage of 15V and a nominal transition frequency of 500MHz, this transistor provides value and versatility for your projects. Whether you're a hobbyist or a professional, the MPS2369ARLRPG promises to deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for ease of handling and installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in high-speed switching applications.

Configuration: SINGLE

Simplified circuit design and easier to manage compared to multiple configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Package Shape: ROUND

Compact design for space-saving and versatile installation options.

Terminal Form: THROUGH-HOLE

Easy to solder and secure on the circuit board.

Maximum Power Dissipation (Abs): 0.36 W

Can handle moderate power dissipation, suitable for various applications.

Minimum DC Current Gain (hFE): 20

Consistent and reliable current gain for stable performance.

Maximum Collector-Emitter Voltage: 15 V

Can handle high voltages, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers excellent performance and reliability in electronic devices.

Maximum Turn On Time (ton): 12 ns

Fast turn-on time for quick response in switching operations.

Maximum Collector Current (IC): 0.2 A

Able to handle moderate current levels for various applications.

Maximum Turn Off Time (toff): 18 ns

Fast turn-off time for efficient switching performance.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish for reliable connections and minimal resistance.

Terminal Position: BOTTOM

Easier to mount and connect in circuit designs.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering process.

Nominal Transition Frequency (fT): 500 MHz

High frequency capability for fast signal switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2369ARLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

18 ns

Maximum Turn On Time (ton):

12 ns

Trade Compliance

MPS2369ARLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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