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MPSA05RLRMG

Onsemi

MPSA05RLRMG by Onsemi

MPSA05RLRMG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and max current of 0.5A. With a min DC current gain of 100, it's ideal for amplifier applications. This through-hole transistor has a package style of cylindrical and can handle up to 150°C operating temperature.

Median Price

$3.891

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 39 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

39

-

$0.092

$0.077

$0.068

DigiKey

USA . 39 parts In-Stock

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-

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$7.690

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39

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$7.690

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Digiode

USA . 1,164 parts In-Stock

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$0.072

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$0.072

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Bristol Electronics

USA . 1,375 parts In-Stock

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$0.375

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$0.188

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$0.075

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1,375

$0.375

$0.188

$0.075

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DigiKey Marketplace

USA . 94,097 parts In-Stock

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94,097

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Chip Stock

USA . 18,000 parts In-Stock

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Diverse Electronics

Canada . 10,000 parts In-Stock

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Vyrian

USA . 8,433 parts In-Stock

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8,433

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Connector Distribution Corp

USA . 2,000 parts In-Stock

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2,000

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Right Parts Inc.

USA . 2,000 parts In-Stock

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2,000

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Microfarads

USA . 1,631 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 985 parts In-Stock

1+ parts

$0.068

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985

$0.068

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Corohmni

South Africa . 121 parts In-Stock

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$0.076

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121

$0.076

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AZTECH Wire

Italy . 804 parts In-Stock

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$14.970

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804

$14.970

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Continental Prestige Electronics

USA . 94,097 parts In-Stock

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$0.069

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94,097

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$0.069

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Perfect Parts

USA . 69,298 parts In-Stock

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TANS Electronics

Latvia . 3,853 parts In-Stock

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Problanco Electronics

Mexico . 2,306 parts In-Stock

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Metaverse IC Inc.

Canada . 2,168 parts In-Stock

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Kulean Microsystems

USA . 932 parts In-Stock

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SupplyDigital Components

Austria . 688 parts In-Stock

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UHIMA Technologies

Türkiye . 190 parts In-Stock

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Overview

Boost your electronic projects with the MPSA05RLRMG by Onsemi. This small signal bipolar junction transistor is designed to deliver high performance and reliability, thanks to Onsemi's reputation for quality manufacturing. Ideal for amplifier applications, this NPN transistor offers a maximum collector-emitter voltage of 60V and a minimum DC current gain of 100, making it a versatile component for various projects. Trust Onsemi to provide you with a top-notch product that will enhance your designs and take them to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use.

Maximum Power Dissipation: 0.625 W

High maximum power dissipation allows for efficient operation and reduces the risk of overheating.

Minimum DC Current Gain (hFE): 100

High DC current gain ensures stable and consistent amplification performance.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating provides flexibility in circuit design and allows for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

High collector current rating allows for larger signal amplification capabilities.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency ensures that the transistor can handle high-frequency signals with accuracy and efficiency.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA05RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA05RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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