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MPSA55RLRAG

Onsemi

MPSA55RLRAG by Onsemi

MPSA55RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 100 and can handle a max collector-emitter voltage of 60V. With a max operating temperature of 150°C, it has a power dissipation of 0.625W in a cylindrical package suitable for through-hole mounting.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,000 parts In-Stock

1+ parts

$0.129

100+ parts

$0.123

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2,000

$0.129

$0.123

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Verical

USA . 2,000 parts In-Stock

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$0.082

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2,000

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$0.082

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Distributors (In-Stock)

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Digiode

USA . 2,303 parts In-Stock

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$0.123

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2,303

$0.123

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Chip Stock

USA . 49,000 parts In-Stock

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49,000

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Vyrian

USA . 11,158 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,816 parts In-Stock

1+ parts

$0.070

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1,816

$0.070

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Corohmni

South Africa . 287 parts In-Stock

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$0.082

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287

$0.082

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Corphita

USA . 240 parts In-Stock

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$0.116

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240

$0.116

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Aztec Data Supply Inc.

USA . 255 parts In-Stock

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$0.294

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255

$0.294

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AZTECH Wire

Italy . 774 parts In-Stock

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$19.370

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774

$19.370

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Component Stockers USA

USA . 473 parts In-Stock

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$99.990

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473

$99.990

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Kepictronics

USA . 14,000 parts In-Stock

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Perfect Parts

USA . 13,204 parts In-Stock

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SupplyDigital Components

Austria . 7,057 parts In-Stock

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Kulean Microsystems

USA . 3,438 parts In-Stock

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Problanco Electronics

Mexico . 2,502 parts In-Stock

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Argo Parts USA

USA . 1,627 parts In-Stock

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TANS Electronics

Latvia . 1,480 parts In-Stock

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UHIMA Technologies

Türkiye . 384 parts In-Stock

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384

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Bastille Electronics

Australia . 200 parts In-Stock

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Continental Prestige Electronics

USA . 139 parts In-Stock

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Overview

Upgrade your amplifiers with the MPSA55RLRAG by Onsemi! Crafted with precision and reliability, Onsemi's Small Signal Bipolar Junction Transistor offers exceptional performance in a compact package. Ideal for amplifier applications, this PNP transistor boasts a high DC current gain of 100, ensuring optimal signal amplification. With a maximum collector-emitter voltage of 60V and a maximum operating temperature of 150°C, this transistor is built to last. Trust Onsemi's expertise to deliver superior quality and efficiency in every component. Elevate your projects with the MPSA55RLRAG and experience unmatched value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio or signal amplification.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capacity, this transistor can handle power efficiently without overheating.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating allows for stable operation in applications with higher voltage levels.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency enables fast switching speeds and high-frequency operation, making it suitable for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA55RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA55RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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