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MSD1328-ST1G

Onsemi

MSD1328-ST1G by Onsemi

The Onsemi MSD1328-ST1G is a NPN BJT transistor with 300 min hFE, 0.5A IC, and 20V VCE. Ideal for amplifier applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150 °C, it has a peak reflow temperature of 260°C.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 59,970 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

59,970

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$0.030

$0.025

$0.023

DigiKey

USA . 59,970 parts In-Stock

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$0.040

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$0.040

Verical

USA . 59,970 parts In-Stock

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59,970

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Digiode

USA . 82 parts In-Stock

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$0.024

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82

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 6,315 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 60,759 parts In-Stock

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$0.021

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$0.021

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Corphita

USA . 1,201 parts In-Stock

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$0.022

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Corohmni

South Africa . 127 parts In-Stock

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$0.025

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127

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AZTECH Wire

Italy . 1,084 parts In-Stock

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$14.420

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Continental Prestige Electronics

USA . 59,970 parts In-Stock

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$0.020

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Kepictronics

USA . 33,000 parts In-Stock

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,266 parts In-Stock

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SupplyDigital Components

Austria . 4,949 parts In-Stock

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TANS Electronics

Latvia . 2,731 parts In-Stock

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Problanco Electronics

Mexico . 1,929 parts In-Stock

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UHIMA Technologies

Türkiye . 586 parts In-Stock

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Kulean Microsystems

USA . 244 parts In-Stock

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Overview

The MSD1328-ST1G by Onsemi is a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a renowned industry leader, this NPN transistor is perfect for amplifier applications. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 20V, this transistor delivers superior power dissipation and efficiency. Its compact rectangular package with gull wing terminals makes it ideal for surface mount applications. Trust Onsemi to provide you with the best-in-class transistor solutions for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, ideal for applications where weight and durability are important.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy installation and rework in compact electronic devices.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation capability, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures efficient amplification and signal processing in the circuit.

Maximum Collector-Emitter Voltage: 20 V

A high collector-emitter voltage rating provides greater flexibility in circuit design and operation.

Maximum Collector Current (IC): 0.5 A

With a high collector current rating, this transistor can handle higher current levels without damage.

Maximum Operating Temperature: 150 °C

Operates efficiently at high temperatures, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1328-ST1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD1328-ST1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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