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MSD1328-RT1G

Onsemi

MSD1328-RT1G by Onsemi

The Onsemi MSD1328-RT1G is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.2W, hFE of 200, and max collector-emitter voltage of 20V. With Gull Wing terminals and small outline package style, it operates up to 150 °C peak reflow temperature.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,189,970 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

1,189,970

-

$0.066

$0.055

$0.049

DigiKey

USA . 1,189,970 parts In-Stock

1+ parts

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$0.080

1,189,970

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$0.080

Verical

USA . 973,970 parts In-Stock

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$0.061

973,970

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$0.061

Distributors (In-Stock)

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Digiode

USA . 209 parts In-Stock

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$0.051

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209

$0.051

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Vyrian

USA . 742 parts In-Stock

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$0.054

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742

$0.054

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DigiKey Marketplace

USA . 1,189,970 parts In-Stock

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1,189,970

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Chip Stock

USA . 63,000 parts In-Stock

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63,000

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Zilex Electronics Inc.

Canada . 6,000 parts In-Stock

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6,000

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,082 parts In-Stock

1+ parts

$0.049

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1,082

$0.049

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Corohmni

South Africa . 85 parts In-Stock

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$0.054

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85

$0.054

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Continental Prestige Electronics

USA . 1,189,970 parts In-Stock

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$0.049

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1,189,970

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$0.049

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Perfect Parts

USA . 37,240 parts In-Stock

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Kepictronics

USA . 33,000 parts In-Stock

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33,000

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A-Z Elektronik GmbH

Germany . 7,415 parts In-Stock

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SupplyDigital Components

Austria . 6,834 parts In-Stock

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Problanco Electronics

Mexico . 6,407 parts In-Stock

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GreenTree Electronics

Israel . 2,951 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 2,951 parts In-Stock

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TANS Electronics

Latvia . 2,057 parts In-Stock

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2,057

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UHIMA Technologies

Türkiye . 549 parts In-Stock

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549

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Kulean Microsystems

USA . 21 parts In-Stock

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Overview

Unlock the potential of your electronics with the Onsemi MSD1328-RT1G small signal bipolar junction transistor. With a reputation for quality and innovation, Onsemi delivers reliable components for a wide range of applications, including amplifiers. The NPN configuration and high DC current gain ensure optimal performance, while the compact, surface-mount design makes installation a breeze. Trust Onsemi to provide the value and benefits you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor a versatile choice for various circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to work with in electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers reliable and consistent amplification performance.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation on printed circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape offers compactness and efficient use of board space, ideal for designs with size constraints.

No. of Terminals: 3

With 3 terminals, this transistor provides essential connections for input, output, and biasing, ensuring proper functionality in electronic circuits.

Maximum Power Dissipation (Abs): 0.2 W

The low power dissipation rating allows for efficient energy usage and reduces the risk of overheating during operation.

Minimum DC Current Gain (hFE): 200

The high DC current gain ensures reliable and stable amplification performance, essential for signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 20 V

The high collector-emitter voltage rating provides a safe operating margin and protects the transistor from voltage spikes or fluctuations.

Maximum Collector Current (IC): 0.5 A

The maximum collector current rating of 0.5 A allows for handling moderate current levels, suitable for various amplifier and switching applications.

Terminal Finish: TIN

The tin terminal finish ensures good solderability and reliable electrical connections, enhancing the overall performance and longevity of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30s, this transistor can withstand high-temperature soldering processes without compromising its performance.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating of 260 °C ensures proper soldering and reflow processes, maintaining the integrity of the transistor connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1328-RT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD1328-RT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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