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MSD1328-ST1

Onsemi

MSD1328-ST1 by Onsemi

Onsemi's MSD1328-ST1 is a NPN BJT transistor with 300 min hFE, 0.5A IC, and 20V VCE. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150 °C.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 519,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

519,000

-

$0.030

$0.025

$0.023

DigiKey

USA . 519,000 parts In-Stock

1+ parts

-

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1k+ parts

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519,000

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-

-

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Distributors (In-Stock)

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Digiode

USA . 1,187 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,187

$0.024

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Vyrian

USA . 2,463 parts In-Stock

1+ parts

$0.025

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-

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2,463

$0.025

-

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R&J Components

USA . 2,891 parts In-Stock

1+ parts

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2,891

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Distributors (Availability)

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Corphita

USA . 187 parts In-Stock

1+ parts

$0.022

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-

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187

$0.022

-

-

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Corohmni

South Africa . 279 parts In-Stock

1+ parts

$0.025

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-

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279

$0.025

-

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-

Component Stockers USA

USA . 377,600 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

377,600

$0.030

$0.020

$0.020

$0.020

Continental Prestige Electronics

USA . 519,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.016

519,000

-

-

-

$0.016

Metaverse IC Inc.

Canada . 30,000 parts In-Stock

1+ parts

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30,000

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TANS Electronics

Latvia . 6,361 parts In-Stock

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6,361

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A-Z Elektronik GmbH

Germany . 6,048 parts In-Stock

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6,048

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SupplyDigital Components

Austria . 5,030 parts In-Stock

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5,030

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Kulean Microsystems

USA . 4,039 parts In-Stock

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4,039

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Kepictronics

USA . 3,133 parts In-Stock

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3,133

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Assy Fe

Spain . 2,938 parts In-Stock

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2,938

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RC Electronics

USA . 2,700 parts In-Stock

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$0.030

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$0.030

10k+ parts

$0.030

2,700

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$0.030

$0.030

$0.030

Problanco Electronics

Mexico . 539 parts In-Stock

1+ parts

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539

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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506

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Overview

Elevate your electronic projects with the MSD1328-ST1 by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor. Manufactured with precision and expertise, this NPN transistor offers high-quality performance in amplifier applications. With its compact design and durable plastic/epoxy body, this transistor is perfect for surface mount installations. Experience a seamless integration into your circuits with the convenience of its gull wing terminals and single configuration. Trust Onsemi's reputation for excellence and unlock the potential of your projects with the MSD1328-ST1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material offers good thermal resistance and mechanical durability, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and the NPN configuration allows for easy integration into existing designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to use in applications that only require one transistor.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable performance and high-quality amplification.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular package shape offers good compatibility with standard PCB layouts and allows for easy placement and soldering.

Terminal Form: GULL WING

The gull wing terminal form provides strong mechanical soldering connections, ensuring reliable electrical connections in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, the transistor can handle moderate power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves board space and allows for compact circuit designs, making it suitable for applications with limited space.

Minimum DC Current Gain (hFE): 300

The high minimum DC current gain ensures consistent and stable amplification in a wide range of operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can operate reliably in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 20 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltage levels, making it suitable for versatile applications.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and low noise, ensuring high fidelity amplification and reliable performance.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, the transistor can handle moderate current levels, making it suitable for many amplification applications.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides good solderability and ensures reliable solder joints for durable and long-lasting connections.

Terminal Position: DUAL

The dual terminal position allows for easy and flexible PCB layout, making it easy to integrate the transistor into various circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures safe and effective soldering during production, minimizing the risk of damage to the transistor.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235 °C allows for reliable and efficient soldering during assembly, ensuring strong and durable solder joints.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1328-ST1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD1328-ST1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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