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MSD1010LT3

Onsemi

MSD1010LT3 by Onsemi

The Onsemi MSD1010LT3 is a PNP BJT transistor with hFE of 300, IC of 0.1A, and VCE of 15V. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,726 parts In-Stock

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Vyrian

USA . 1,243 parts In-Stock

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Kulean Microsystems

USA . 6,004 parts In-Stock

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TANS Electronics

Latvia . 5,846 parts In-Stock

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SupplyDigital Components

Austria . 4,142 parts In-Stock

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Problanco Electronics

Mexico . 3,044 parts In-Stock

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Corphita

USA . 2,479 parts In-Stock

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UHIMA Technologies

Türkiye . 262 parts In-Stock

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Corohmni

South Africa . 60 parts In-Stock

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Overview

Unleash the power of innovation with the MSD1010LT3 by Onsemi, a top-tier manufacturer known for their cutting-edge technology and unparalleled quality. This Small Signal Bipolar Junction Transistor (BJT) is designed for switching applications, offering customers reliability and efficiency like never before. With its PNP polarity, single configuration, and high DC current gain, this transistor is the ultimate solution for your electronic needs. Elevate your projects to new heights with the MSD1010LT3 and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Ideal for applications requiring PNP transistors, such as switching circuits.

Configuration: SINGLE

Simplified design and easy to use for various switch applications.

Transistor Application: SWITCHING

Optimized for switching operations, offering reliable performance in such scenarios.

Surface Mount: YES

Easily mountable on circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Efficient use of space on the circuit board, allowing for compact designs.

Terminal Form: GULL WING

Facilitates easy soldering and secure connections during assembly.

Minimum DC Current Gain (hFE): 300

High current gain ensures reliable amplification and signal switching capabilities.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 15 V

Suitable for low voltage applications where precise control is needed.

Transistor Element Material: SILICON

Silicon offers high performance and low noise characteristics, making it an ideal choice for small signal applications.

Maximum Collector Current (IC): 0.1 A

With a 0.1A maximum current rating, it can handle typical small signal requirements efficiently.

Terminal Finish: TIN LEAD

Provides corrosion resistance and good solderability, ensuring reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit board layout and connection options.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1010LT3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MSD1010LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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