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MSD1010LT1

Onsemi

MSD1010LT1 by Onsemi

The Onsemi MSD1010LT1 is a PNP BJT transistor with hFE of 300, VCE of 15V, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and operates up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,497 parts In-Stock

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Digiode

USA . 431 parts In-Stock

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431

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Kulean Microsystems

USA . 7,499 parts In-Stock

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7,499

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TANS Electronics

Latvia . 4,663 parts In-Stock

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SupplyDigital Components

Austria . 2,929 parts In-Stock

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Problanco Electronics

Mexico . 1,833 parts In-Stock

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Corphita

USA . 741 parts In-Stock

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741

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Corohmni

South Africa . 485 parts In-Stock

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UHIMA Technologies

Türkiye . 185 parts In-Stock

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Overview

Upgrade your electronic projects with the MSD1010LT1 from Onsemi, a leading manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers high-quality performance for switching applications. With a maximum collector-emitter voltage of 15V and a minimum DC current gain of 300, this PNP transistor is perfect for a wide range of projects. Its surface-mount design, Gull Wing terminal form, and compact package make it easy to use in various applications. Trust Onsemi's reputation for excellence and enhance your designs with the MSD1010LT1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP type transistors are commonly used in switching circuits, making this transistor ideal for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making it easier to use in different projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficient operation.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

Rectangular shape helps in easy placement and alignment on the PCB, improving overall circuit design.

Terminal Form: GULL WING

GULL WING terminals provide secure connections and facilitate easy soldering, ensuring good electrical contact.

No. of Terminals: 3

Three terminals simplify connections and ensure proper circuit configuration, making it user-friendly for various projects.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for compact designs and applications.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures amplification and stability in circuit operation, providing reliable performance.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of environments, ensuring reliability and durability.

Maximum Collector-Emitter Voltage: 15 V

High collector-emitter voltage rating allows for usage in high voltage applications without the risk of breakdown.

Transistor Element Material: SILICON

Silicon material ensures low leakage and high reliability, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

High collector current rating allows for handling of larger currents, making it suitable for various switching applications.

Terminal Finish: TIN LEAD

TIN LEAD terminal finish provides good solderability and conductivity, ensuring reliable electrical connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections, making it suitable for various circuit configurations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1010LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MSD1010LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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