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MSD1819A-RT1G

Onsemi

MSD1819A-RT1G by Onsemi

The Onsemi MSD1819A-RT1G is a NPN BJT transistor with 0.5V VCEsat, 90 min hFE, and 50V VCEO. Ideal for amplifier applications, it has a max power dissipation of 0.15W in a small outline package with Gull Wing terminals. Operating up to 150°C, it is surface mountable with matte tin finish.

Median Price

$0.130

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 13,790 parts In-Stock

1+ parts

$0.036

100+ parts

$0.020

1k+ parts

-

10k+ parts

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13,790

$0.036

$0.020

-

-

Newark

USA . 12,316 parts In-Stock

1+ parts

$0.247

100+ parts

$0.096

1k+ parts

$0.062

10k+ parts

$0.057

12,316

$0.247

$0.096

$0.062

$0.057

Mouser Electronics

USA . 7,323 parts In-Stock

1+ parts

$0.260

100+ parts

$0.099

1k+ parts

$0.064

10k+ parts

$0.044

7,323

$0.260

$0.099

$0.064

$0.044

DigiKey

USA . 4,148 parts In-Stock

1+ parts

$0.260

100+ parts

$0.098

1k+ parts

$0.064

10k+ parts

-

4,148

$0.260

$0.098

$0.064

-

Chip1Stop

Japan . 2,189 parts In-Stock

1+ parts

$0.562

100+ parts

$0.122

1k+ parts

$0.073

10k+ parts

-

2,189

$0.562

$0.122

$0.073

-

Rochester

USA . 609,000 parts In-Stock

1+ parts

-

100+ parts

$0.038

1k+ parts

$0.031

10k+ parts

$0.028

609,000

-

$0.038

$0.031

$0.028

Verical

USA . 408,000 parts In-Stock

1+ parts

-

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$0.039

408,000

-

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$0.039

Flip Electronics (Authorized)

USA . 36,000 parts In-Stock

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36,000

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Avnet

USA . 27,000 parts In-Stock

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27,000

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Farnell

UK . 12,326 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.042

10k+ parts

$0.035

12,326

-

$0.071

$0.042

$0.035

Element14

Singapore . 12,326 parts In-Stock

1+ parts

-

100+ parts

$0.130

1k+ parts

$0.069

10k+ parts

$0.068

12,326

-

$0.130

$0.069

$0.068

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,424 parts In-Stock

1+ parts

$0.019

100+ parts

-

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2,424

$0.019

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-

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Vyrian

USA . 205 parts In-Stock

1+ parts

$0.020

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-

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205

$0.020

-

-

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Bristol Electronics

USA . 21,000 parts In-Stock

1+ parts

$0.161

100+ parts

$0.081

1k+ parts

$0.032

10k+ parts

$0.020

21,000

$0.161

$0.081

$0.032

$0.020

Chip Stock

USA . 732,500 parts In-Stock

1+ parts

-

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732,500

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Flip Electronics

USA . 36,000 parts In-Stock

1+ parts

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36,000

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IBS Electronics

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.040

21,000

-

-

-

$0.040

Dan-Mar Components

USA . 21,000 parts In-Stock

1+ parts

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21,000

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NAC Semi

USA . 18,000 parts In-Stock

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18,000

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Connect4Technologies Inc.

Canada . 7,268 parts In-Stock

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7,268

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Prism Electronics

USA . 3,532 parts In-Stock

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3,532

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Semi Source

USA . 2,850 parts In-Stock

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2,850

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Distributors (Availability)

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Corphita

USA . 2,409 parts In-Stock

1+ parts

$0.018

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2,409

$0.018

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Corohmni

South Africa . 227 parts In-Stock

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$0.031

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227

$0.031

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Continental Prestige Electronics

USA . 13,396 parts In-Stock

1+ parts

$0.186

100+ parts

$0.053

1k+ parts

$0.036

10k+ parts

$0.022

13,396

$0.186

$0.053

$0.036

$0.022

Perfect Parts

USA . 173,881 parts In-Stock

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Lixinc

USA . 10,297 parts In-Stock

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Problanco Electronics

Mexico . 7,988 parts In-Stock

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7,988

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TANS Electronics

Latvia . 7,936 parts In-Stock

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7,936

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A-Z Elektronik GmbH

Germany . 6,164 parts In-Stock

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6,164

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Kulean Microsystems

USA . 5,368 parts In-Stock

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5,368

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,189 parts In-Stock

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2,189

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GreenTree Electronics

Israel . 2,189 parts In-Stock

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2,189

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SupplyDigital Components

Austria . 1,438 parts In-Stock

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1,438

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 415 parts In-Stock

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415

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Overview

Discover the power of the MSD1819A-RT1G by Onsemi, a top-tier manufacturer renowned for its quality and reliability. This Small Signal Bipolar Junction Transistor is a game-changer in the amplifier industry, offering unparalleled performance and efficiency. With a low VCEsat of 0.5V and a maximum collector current of 0.1A, this NPN transistor is perfect for a wide range of applications. Its compact design, high DC current gain, and maximum operating temperature of 150°C make it a must-have for any electronics enthusiast. Experience the difference with Onsemi's MSD1819A-RT1G and unlock new possibilities in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into a variety of electronic devices.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates low power consumption and efficient performance of the transistor.

Surface Mount: YES

Surface mount feature allows for easy and compact PCB layout, saving space and simplifying manufacturing processes.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation ensures that the transistor stays within safe operating temperatures, contributing to its reliability.

Minimum DC Current Gain (hFE): 90

High DC current gain provides high amplification capabilities, making this transistor suitable for amplifier applications.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High maximum VCE rating ensures that the transistor can handle higher voltage levels without breakdown, improving its durability.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current rating enables the transistor to handle higher currents, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1819A-RT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Maximum VCEsat:

.5 V

Trade Compliance

MSD1819A-RT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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