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MSD1328-RT3

Onsemi

MSD1328-RT3 by Onsemi

The Onsemi MSD1328-RT3 is a NPN BJT transistor with hFE of 200, VCE of 20V, and IC of 0.5A. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 529 parts In-Stock

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Digiode

USA . 164 parts In-Stock

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Kulean Microsystems

USA . 7,051 parts In-Stock

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Problanco Electronics

Mexico . 6,921 parts In-Stock

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TANS Electronics

Latvia . 5,985 parts In-Stock

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SupplyDigital Components

Austria . 4,339 parts In-Stock

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Corphita

USA . 2,477 parts In-Stock

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UHIMA Technologies

Türkiye . 308 parts In-Stock

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Corohmni

South Africa . 284 parts In-Stock

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Overview

Enhance your electronic projects with the MSD1328-RT3 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that guarantees superior performance and reliability. With Onsemi's reputation for excellence in semiconductor manufacturing, you can trust that this NPN transistor delivers exceptional results in amplifier applications. Its compact design and surface mount capabilities make it ideal for various projects where space is limited. Experience the value and benefits of this product, from its high DC current gain to its maximum collector-emitter voltage, providing customers with unmatched advantages in their electronic designs. Upgrade your circuits with the MSD1328-RT3 and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high performance and reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to incorporate into various electronic applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides excellent signal amplification capabilities.

Surface Mount: YES

The surface mount feature allows for easy and secure placement on the circuit board, saving space and ensuring stable connections.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy positioning and placement on the circuit board, optimizing space and improving overall circuit design.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and reliability, enhancing the overall durability of the transistor.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and configurations, making the transistor versatile for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is ideal for compact electronic designs, while also providing efficient heat dissipation.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this transistor offers high amplification capabilities and ensures stable and reliable performance.

Maximum Collector-Emitter Voltage: 20 V

The maximum collector-emitter voltage of 20V provides sufficient voltage handling capability for various low-power applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance, reliability, and efficiency, making this transistor a durable and dependable choice.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor is suitable for low-power applications where moderate current handling is required.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures excellent solderability and reliable electrical connections, enhancing the overall quality and performance of the transistor.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit connections and mounting options, making the transistor easy to integrate into various electronic designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1328-RT3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD1328-RT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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