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MSD1819A-RT1

Onsemi

MSD1819A-RT1 by Onsemi

The Onsemi MSD1819A-RT1 is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.15W, hFE of 90, and can operate at up to 150 °C. The package is small outline with Gull Wing terminals and can handle a max collector-emitter voltage of 50V.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.033

10k+ parts

$0.029

9,000

-

$0.040

$0.033

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 939 parts In-Stock

1+ parts

$0.031

100+ parts

-

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-

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939

$0.031

-

-

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Vyrian

USA . 1,249 parts In-Stock

1+ parts

$0.033

100+ parts

-

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1,249

$0.033

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Electronic Expediters

USA . 281,495 parts In-Stock

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281,495

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Distributors (Availability)

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Corphita

USA . 1,108 parts In-Stock

1+ parts

$0.030

100+ parts

-

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1,108

$0.030

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Corohmni

South Africa . 138 parts In-Stock

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$0.033

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-

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138

$0.033

-

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Assy Fe

Spain . 20,500 parts In-Stock

1+ parts

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20,500

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SupplyDigital Components

Austria . 8,297 parts In-Stock

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8,297

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TANS Electronics

Latvia . 7,803 parts In-Stock

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7,803

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A-Z Elektronik GmbH

Germany . 4,794 parts In-Stock

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4,794

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Kulean Microsystems

USA . 4,324 parts In-Stock

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4,324

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 525 parts In-Stock

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525

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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249

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Overview

Enhance your electronic designs with the high-quality MSD1819A-RT1 NPN transistor from Onsemi. As a leading manufacturer in the industry, Onsemi guarantees reliability and performance in every product they create. This small signal BJT is perfect for amplifier applications, offering customers value and benefits like efficient power dissipation, high collector current, and a wide operating temperature range. Upgrade your projects with the MSD1819A-RT1 and experience superior functionality and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications

Polarity or Channel Type: NPN

Commonly used for amplification in electronic circuits

Configuration: SINGLE

Simple setup without additional components

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes

Surface Mount: YES

Easy and efficient installation on PCBs

Package Shape: RECTANGULAR

Space-saving design for compact circuits

Terminal Form: GULL WING

Allows for easy soldering and secure connection

No. of Terminals: 3

Simplified circuit connections

Maximum Power Dissipation (Abs): 0.15 W

Suitable for low power applications

Package Style (Meter): SMALL OUTLINE

Space-efficient packaging for small electronic devices

Minimum DC Current Gain (hFE): 90

Consistent and reliable amplification performance

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments

Maximum Collector-Emitter Voltage: 50 V

Suitable for voltage amplification applications

Transistor Element Material: SILICON

High-performance material for transistors

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels

Terminal Finish: TIN LEAD

Corrosion-resistant finish for long-term reliability

Terminal Position: DUAL

Provides flexibility in circuit design

Peak Reflow Temperature °C: 235

Can withstand high-temperature soldering processes

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1819A-RT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSD1819A-RT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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