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MSD1328-RT1

Onsemi

MSD1328-RT1 by Onsemi

The Onsemi MSD1328-RT1 is a NPN BJT transistor with 200 min hFE, 20V VCEO, and 200MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

$0.040

1k+ parts

$0.033

10k+ parts

$0.029

9,000

-

$0.040

$0.033

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,062 parts In-Stock

1+ parts

$0.031

100+ parts

-

1k+ parts

-

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2,062

$0.031

-

-

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Vyrian

USA . 949 parts In-Stock

1+ parts

$0.033

100+ parts

-

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949

$0.033

-

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R&J Components

USA . 2,730 parts In-Stock

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2,730

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Distributors (Availability)

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Corphita

USA . 1,748 parts In-Stock

1+ parts

$0.030

100+ parts

-

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1,748

$0.030

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-

Component Stockers USA

USA . 8,396 parts In-Stock

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$0.030

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$0.030

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$0.030

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-

8,396

$0.030

$0.030

$0.030

-

Corohmni

South Africa . 184 parts In-Stock

1+ parts

$0.033

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-

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184

$0.033

-

-

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RC Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

10,000

-

$0.050

$0.050

$0.050

A-Z Elektronik GmbH

Germany . 6,422 parts In-Stock

1+ parts

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6,422

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Kulean Microsystems

USA . 4,659 parts In-Stock

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4,659

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TANS Electronics

Latvia . 4,618 parts In-Stock

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4,618

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Assy Fe

Spain . 3,305 parts In-Stock

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3,305

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Problanco Electronics

Mexico . 2,680 parts In-Stock

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2,680

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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890

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SupplyDigital Components

Austria . 839 parts In-Stock

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839

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Overview

Enhance your electronic projects with the MSD1328-RT1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that amplifies signals efficiently. Onsemi, known for its exceptional manufacturing standards, delivers a reliable product with NPN polarity and Gull Wing terminals for easy installation. Ideal for amplifier applications, this transistor offers a maximum collector-emitter voltage of 20V and a minimum DC current gain of 200, ensuring optimal performance. Upgrade your circuits with the MSD1328-RT1 and experience unparalleled value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration makes it easy to integrate into circuits without the need for complex setups.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards.

Package Shape: RECTANGULAR

Rectangular shape is space-efficient and fits well in compact electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide a secure connection and easy soldering during assembly.

No. of Terminals: 3

Three terminals allow for straightforward connections in circuits.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic designs.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures reliable amplification of signals.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures in various operating conditions.

Maximum Collector-Emitter Voltage: 20 V

A maximum collector-emitter voltage of 20 V allows for safe operation within the specified voltage range.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties for the transistor's performance.

Maximum Collector Current (IC): 0.5 A

Maximum collector current of 0.5 A enables the transistor to handle moderate current levels.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand reflow soldering processes.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures proper solder reflow during assembly processes.

Nominal Transition Frequency (fT): 200 MHz

A high nominal transition frequency of 200 MHz indicates the transistor's capability for high-speed signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1328-RT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSD1328-RT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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