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MSD1010T1

Db Lectro

MSD1010T1 by Db Lectro

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSD1010T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Db Lectro

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.19 V

Trade Compliance

MSD1010T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Db Lectro

Founded in 1987 by Jocelyne and Daniel Bergeron, DB LECTRO Inc. is an authorized supplier of high quality electronic , electromechanical, optoelectronic Their sons François and Mathieu joined the team a few years later, in order to respond to constant growth, while ensuring the succession of the family business. Over the years, DB LECTRO has developed and maintained strategic alliances with major component manufacturers around the world. ISO certified, they quickly adopted RoHS standards to meet industry requirements. ISO 9001:2015 certified company for Distribution of electronic components, equipment and supplies

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