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MPSA44RLRAG

Onsemi

MPSA44RLRAG by Onsemi

MPSA44RLRAG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 400V, ideal for switching applications. It has a min. DC current gain of 40 and max. operating temp of 150 °C, making it suitable for high-power dissipation up to 0.625W in cylindrical package style.

Median Price

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Lifecycle Status

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8

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1k+

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Chip Stock

USA . 62,000 parts In-Stock

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Classic Components Corporation

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Vyrian

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LIBRA Elektronik GmbH

Germany . 2,000 parts In-Stock

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Digiode

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Pegasus Components GmbH

Germany . 300 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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AZTECH Wire

Italy . 1,100 parts In-Stock

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Kepictronics

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SupplyDigital Components

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TANS Electronics

Latvia . 5,258 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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Corphita

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UHIMA Technologies

Türkiye . 479 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the MPSA44RLRAG by Onsemi - a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor is ideal for switching applications, offering reliability and precision in performance. With a maximum collector-emitter voltage of 400V and a nominal transition frequency of 20MHz, this transistor provides excellent value and efficiency to customers looking for top-notch components. Upgrade your designs with the MPSA44RLRAG and experience enhanced functionality and superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, ideal for applications where weight and durability are important.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching and amplification circuits, making this transistor versatile and suitable for a variety of applications.

Configuration: SINGLE

Single configuration makes this transistor easy to use and integrate into circuits, simplifying the design process.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and efficient performance in switching circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for industrial and automotive applications.

Nominal Transition Frequency (fT): 20 MHz

The high nominal transition frequency of 20 MHz indicates that this transistor is capable of handling high-frequency signals, making it suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA44RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA44RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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