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MMBT2222AK

Fairchild Semiconductor

MMBT2222AK by Fairchild Semiconductor

MMBT2222AK by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.35W, and max. collector-emitter voltage of 40V. It is used in small outline packages for applications requiring a DC current gain (hFE) of at least 40, operating temperatures up to 150°C, and a transition frequency (fT) of 300MHz.

Median Price

$0.160

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AZTECH Wire

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Overview

Discover the superior performance and reliability of the MMBT2222AK by Fairchild Semiconductor. As a leading manufacturer in the industry, Fairchild Semiconductor ensures top-quality products that exceed expectations. This Small Signal Bipolar Junction Transistor (BJT) is perfect for a wide range of applications, offering customers unmatched value and benefits. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 40, this NPN transistor provides efficient and effective performance. Trust Fairchild Semiconductor for high-quality components that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Commonly used type of bipolar junction transistor, making it compatible with many circuit designs.

Configuration: SINGLE

Simplified design with only one transistor, making it easier to use in circuits.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 0.35 W

Can handle moderate power levels, suitable for many small signal applications.

Package Shape: RECTANGULAR

Space-efficient shape for PCB layout and mounting.

Terminal Form: GULL WING

Offers secure electrical connections and ease of soldering during assembly.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuits.

Maximum Operating Temperature: 150 °C

Can operate reliably in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 40 V

Sufficient performance for many small signal applications.

Transistor Element Material: SILICON

Offers good performance and reliability, commonly used in transistors.

Maximum Turn On Time (ton): 35 ns

Fast switching time for quick response in circuits.

Maximum Collector Current (IC): 0.6 A

Able to handle moderate current levels for various applications.

Maximum Turn Off Time (toff): 285 ns

Quick turn-off time for efficient circuit operation.

Terminal Finish: MATTE TIN

Provides reliable electrical connections and protection against corrosion.

Terminal Position: DUAL

Dual terminal positioning for stable placement and connections on circuit boards.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency for fast signal amplification and response.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2222AK attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMBT2222AK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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