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MPSA92RLRPG

Onsemi

MPSA92RLRPG by Onsemi

MPSA92RLRPG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 25, and can handle up to 300V collector-emitter voltage. Its package style is cylindrical with through-hole terminals, suitable for various electronic circuits.

Median Price

$0.105

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

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$0.105

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Chip Stock

USA . 25,000 parts In-Stock

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25,000

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R&J Components

USA . 14,919 parts In-Stock

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Vyrian

USA . 5,581 parts In-Stock

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Digiode

USA . 541 parts In-Stock

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541

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ACDS - Activité Composants Distribution Service

France . 5 parts In-Stock

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Corohmni

South Africa . 317 parts In-Stock

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$0.101

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Continental Prestige Electronics

USA . 6,200 parts In-Stock

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$0.105

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$0.103

6,200

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$0.103

Argo Parts USA

USA . 4,210 parts In-Stock

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$0.102

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$0.102

AZTECH Wire

Italy . 464 parts In-Stock

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$11.146

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464

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Ampacity Inc.

Singapore . 235 parts In-Stock

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$58.050

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Perfect Parts

USA . 32,105 parts In-Stock

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Kulean Microsystems

USA . 4,766 parts In-Stock

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Problanco Electronics

Mexico . 3,351 parts In-Stock

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SupplyDigital Components

Austria . 2,107 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.103

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$0.100

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$0.098

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$0.098

Corphita

USA . 1,402 parts In-Stock

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TANS Electronics

Latvia . 1,335 parts In-Stock

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UHIMA Technologies

Türkiye . 272 parts In-Stock

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Overview

Enhance your electronic projects with the MPSA92RLRPG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for amplifier applications. Manufactured by Onsemi, known for their reliability and innovation in semiconductor technology, this PNP transistor offers exceptional performance and durability. With its high power dissipation, low DC current gain, and impressive collector-emitter voltage, the MPSA92RLRPG is a versatile component that can elevate your designs to new heights. Upgrade your circuits today with this single configuration transistor and experience the superior quality and value it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection, making the product durable and reliable in various applications.

Polarity or Channel Type: PNP

Suitable for amplification circuits where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplified design with a single transistor setup, making it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Power Dissipation: 0.625 W

Can handle higher power dissipation, making it suitable for applications requiring higher power output.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for applications where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 300 V

Can handle higher voltage levels, making it suitable for applications where higher voltages are present.

Minimum DC Current Gain (hFE): 25

Provides a minimum current gain of 25, ensuring amplification of input signal with accuracy.

Maximum Collector Current (IC): 0.5 A

Can handle higher collector current, ensuring proper functioning in applications with higher current requirements.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast switching speeds, suitable for high frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA92RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA92RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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