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MPSA20G

Onsemi

MPSA20G by Onsemi

MPSA20G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.1A IC, and 125MHz fT. Ideal for amplifier applications due to its 0.625W Ptot, it features a cylindrical package with through-hole terminals. Operating up to 150 °C, it has a min hFE of 40 and is made of silicon material.

Median Price

$0.744

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 5,000 parts In-Stock

1+ parts

$0.744

100+ parts

$0.129

1k+ parts

$0.077

10k+ parts

-

5,000

$0.744

$0.129

$0.077

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Distributors (In-Stock)

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Digiode

USA . 2,390 parts In-Stock

1+ parts

$0.707

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2,390

$0.707

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Chip Stock

USA . 21,000 parts In-Stock

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21,000

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Vyrian

USA . 12,096 parts In-Stock

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IBS Electronics

USA . 7,748 parts In-Stock

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$2.223

1k+ parts

$0.263

10k+ parts

$0.052

7,748

-

$2.223

$0.263

$0.052

Flip Electronics

USA . 5,100 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,391 parts In-Stock

1+ parts

$0.670

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$0.670

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Corohmni

South Africa . 422 parts In-Stock

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$0.744

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422

$0.744

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AZTECH Wire

Italy . 436 parts In-Stock

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$8.840

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436

$8.840

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Component Stockers USA

USA . 456 parts In-Stock

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$99.990

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456

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Perfect Parts

USA . 34,160 parts In-Stock

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Problanco Electronics

Mexico . 5,300 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 4,743 parts In-Stock

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TANS Electronics

Latvia . 2,965 parts In-Stock

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Kulean Microsystems

USA . 873 parts In-Stock

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UHIMA Technologies

Türkiye . 271 parts In-Stock

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Overview

Enhance your electronic projects with the MPSA20G from Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their cutting-edge technology and reliability, this NPN transistor is perfect for amplifier applications. With a high DC current gain, low power dissipation, and a durable package body material, this transistor offers exceptional performance and longevity. Upgrade your circuits with the MPSA20G and experience superior quality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in various amplifier circuits.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling moderate power levels, making it suitable for amplifier applications without risk of overheating.

Maximum Collector-Emitter Voltage: 40 V

Allows for higher voltage handling capability, making it suitable for amplifier circuits that require higher voltage levels.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for amplifier circuits without risk of damage.

Nominal Transition Frequency (fT): 125 MHz

High transition frequency allows for efficient amplification of signals at relatively high frequencies, making it suitable for audio and RF amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA20G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA20G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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