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MPS6602G

Onsemi

MPS6602G by Onsemi

MPS6602G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and can handle up to 1A collector current. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.

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3

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1k+

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Chip Stock

USA . 43,000 parts In-Stock

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Digiode

USA . 1,478 parts In-Stock

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AZTECH Wire

Italy . 352 parts In-Stock

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$11.590

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Component Stockers USA

USA . 628 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 18,360 parts In-Stock

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Problanco Electronics

Mexico . 7,814 parts In-Stock

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Kulean Microsystems

USA . 5,392 parts In-Stock

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SupplyDigital Components

Austria . 1,123 parts In-Stock

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UHIMA Technologies

Türkiye . 427 parts In-Stock

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Corohmni

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TANS Electronics

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Corphita

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Overview

Upgrade your electronic projects with the MPS6602G by Onsemi, a premium Small Signal Bipolar Junction Transistor that guarantees superior performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this NPN transistor is perfect for amplifier applications. With a maximum power dissipation of 0.625W and a high DC current gain of 30, this transistor delivers exceptional value and efficiency to your designs. Trust Onsemi's expertise and elevate your projects with the MPS6602G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuits for amplification purposes.

Configuration: SINGLE

Simplified design and easy implementation in circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

Can be easily mounted and secured in round-shaped housing or mounting components.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and secure connection in PCBs.

Maximum Power Dissipation (Abs): 0.625 W

Suitable for low to medium power applications, offering reliable performance within specified power limits.

Minimum DC Current Gain (hFE): 30

Ensures consistent amplification performance in circuits.

Maximum Operating Temperature: 150 °C

Can operate efficiently in various environmental conditions without the risk of overheating.

Maximum Collector-Emitter Voltage: 40 V

Capable of handling higher voltages in circuits without breakdown.

Transistor Element Material: SILICON

Reliable material choice for transistor elements, ensuring stability and performance.

Maximum Turn On Time (ton): 55 ns

Fast turn-on time for quick response in switching applications.

Maximum Collector Current (IC): 1 A

Able to handle up to 1A of current flow, suitable for various amplification needs.

Maximum Turn Off Time (toff): 300 ns

Fast turn-off time for efficient switching and control in circuits.

Terminal Finish: TIN SILVER COPPER

Ensures good conductivity and secure soldering connections.

Terminal Position: BOTTOM

Facilitates vertical mounting and efficient PCB layout.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during manufacturing processes.

Nominal Transition Frequency (fT): 100 MHz

High-frequency capability for signal amplification and processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6602G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

55 ns

Trade Compliance

MPS6602G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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