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2SC4617G

Onsemi

2SC4617G by Onsemi

2SC4617G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 18,131 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

18,131

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

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Digiode

USA . 402 parts In-Stock

1+ parts

$0.041

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402

$0.041

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Chip Stock

USA . 28,000 parts In-Stock

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28,000

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Vyrian

USA . 4,962 parts In-Stock

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Semtec, LLC

USA . 2,228 parts In-Stock

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2,228

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Distributors (Availability)

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Corphita

USA . 1,480 parts In-Stock

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$0.039

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-

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1,480

$0.039

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Component Stockers USA

USA . 16,242 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

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$0.040

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$0.040

16,242

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 154 parts In-Stock

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$0.043

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154

$0.043

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$1.687

100+ parts

$1.535

1k+ parts

$1.383

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-

50

$1.687

$1.535

$1.383

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AZTECH Wire

Italy . 1,179 parts In-Stock

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$8.350

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1,179

$8.350

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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RC Electronics

USA . 71,100 parts In-Stock

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Formix International (Excess)

India . 45,931 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,333 parts In-Stock

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Perfect Parts

USA . 8,136 parts In-Stock

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Kulean Microsystems

USA . 6,305 parts In-Stock

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TANS Electronics

Latvia . 5,766 parts In-Stock

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Problanco Electronics

Mexico . 2,975 parts In-Stock

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SupplyDigital Components

Austria . 2,811 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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506

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Microchip USA

USA . 395 parts In-Stock

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395

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Northwest PG Solutions

USA . 206 parts In-Stock

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$3.214

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Native Components

USA . 61 parts In-Stock

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$3.182

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61

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$3.182

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Overview

Enhance your electronic projects with the high-quality 2SC4617G NPN transistor by Onsemi. Designed for amplifier applications, this small signal BJT offers reliable performance and precise functionality. With a maximum operating temperature of 150 °C and a nominal transition frequency of 180 MHz, this transistor guarantees optimal results in various circuit designs. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and elevate your projects with the superior value and benefits of the 2SC4617G transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simple single configuration makes the transistor easy to use in circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy mounting on PCBs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering during assembly.

No. of Terminals: 3

Three terminals provide necessary connections for proper transistor operation.

Maximum Power Dissipation (Abs): 0.125 W

Handles up to 0.125W of power dissipation, suitable for low-power applications.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on the PCB.

Minimum DC Current Gain (hFE): 120

High minimum DC current gain ensures reliable and consistent amplification performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range of up to 150 °C allows for use in various environments.

Maximum Collector-Emitter Voltage: 50 V

Handles up to 50V of collector-emitter voltage, suitable for a range of applications.

Transistor Element Material: SILICON

Silicon material provides efficient and stable transistor operation.

Maximum Collector Current (IC): 0.1 A

Handles up to 0.1A of collector current, suitable for low-current applications.

Terminal Finish: TIN

Tin terminal finish ensures good electrical conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Capable of withstanding peak reflow temperature for up to 30 seconds during soldering.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperature of 260 °C during assembly.

Nominal Transition Frequency (fT): 180 MHz

High nominal transition frequency of 180 MHz allows for fast switching and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC4617G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4617G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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