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2N6520RLRAG

Onsemi

2N6520RLRAG by Onsemi

2N6520RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 350V, max. power dissipation of 1.5W, and min. DC current gain of 15. Ideal for switching applications due to its high transition frequency of 40MHz and low turn-on time of 200ns. Package style is cylindrical with through-hole terminals for easy mounting.

Median Price

$0.251

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Arrow

USA . 264 parts In-Stock

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$0.107

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Chip1Stop

Japan . 808 parts In-Stock

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$1.160

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$0.359

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$0.236

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808

$1.160

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Rochester

USA . 113,138 parts In-Stock

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$0.251

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$0.208

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$0.186

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DigiKey

USA . 113,138 parts In-Stock

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Verical

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Digiode

USA . 850 parts In-Stock

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DigiKey Marketplace

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Inventory MP

USA . 106,000 parts In-Stock

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Bristol Electronics

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Chip Stock

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Sensible Micro Corp

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Vyrian

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NexGen Digital

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Connector Distribution Corp

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Right Parts Inc.

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EMSNET

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Mil-Aero Solutions, Inc.

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Microfarads

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Component Stockers USA

USA . 82,717 parts In-Stock

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Corohmni

South Africa . 119 parts In-Stock

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Native Components

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Northwest PG Solutions

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Perfect Parts

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Overview

Unlock the power of efficient switching applications with the Onsemi 2N6520RLRAG Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor offers superior quality and reliability for your electronic projects. Ideal for a variety of switching applications, this single configuration transistor boasts a maximum collector-emitter voltage of 350V and a minimum DC current gain of 15. With a maximum operating temperature of 150 °C and a nominal transition frequency of 40MHz, this transistor delivers exceptional performance and value to customers seeking high-quality components for their designs. Trust Onsemi to provide cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good thermal conductivity and electrical insulation, making the transistor reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are ideal for applications where current control is required, making this transistor suitable for switching operations.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuits, offering simplicity in design and implementation.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient switching capabilities.

Package Shape: ROUND

Round package shape is compact and space-saving, making it suitable for applications with limited space.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures reliable amplification and control of current flow in the transistor.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand temperature fluctuations and operate efficiently.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage rating allows for handling higher voltage levels in the circuit.

Maximum Turn On Time (ton): 200 ns

Fast turn-on time ensures quick response and efficient switching performance in the transistor.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current rating of 0.5 A, this transistor can handle moderate current levels.

Maximum Turn Off Time (toff): 3500 ns

A high turn-off time allows for controlled switching and minimizes the risk of voltage spikes or overshoot.

Nominal Transition Frequency (fT): 40 MHz

With a high transition frequency, this transistor can operate at high frequencies, making it suitable for fast-switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6520RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3500 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

2N6520RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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