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MPS651RLRMG

Onsemi

MPS651RLRMG by Onsemi

MPS651RLRMG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max collector-emitter voltage of 60V, max collector current of 2A, and min DC current gain of 40 (hFE). With a package style of cylindrical and max operating temp of 150 °C, it's suitable for various electronic designs.

Median Price

$0.211

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 75 parts In-Stock

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$0.158

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$0.158

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Rochester

USA . 24 parts In-Stock

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$0.264

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$0.219

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$0.196

24

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$0.196

Distributors (In-Stock)

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Digiode

USA . 161 parts In-Stock

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$0.150

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Chip Stock

USA . 63,000 parts In-Stock

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Vyrian

USA . 10,165 parts In-Stock

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Corphita

USA . 825 parts In-Stock

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$0.142

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Component Stockers USA

USA . 73 parts In-Stock

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Corohmni

South Africa . 415 parts In-Stock

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$0.158

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AZTECH Wire

Italy . 577 parts In-Stock

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$13.570

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TANS Electronics

Latvia . 8,274 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Perfect Parts

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Problanco Electronics

Mexico . 3,859 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 419 parts In-Stock

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UHIMA Technologies

Türkiye . 413 parts In-Stock

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Continental Prestige Electronics

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Overview

Upgrade your electronic designs with the top-quality MPS651RLRMG Small Signal Bipolar Junction Transistor by Onsemi. With a reputation for excellence, Onsemi delivers superior performance and reliability in every product they create. Ideal for amplifier applications, this NPN transistor offers a maximum power dissipation of 0.625W and a maximum collector-emitter voltage of 60V. Trust in the expertise of Onsemi to provide you with the best-in-class components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration is commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the design and implementation of circuits using this transistor.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio and signal amplification.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle power efficiently without overheating.

No. of Terminals: 3

Three terminals provide the necessary connections for proper functioning in amplifier circuits.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating of 60 V ensures reliable operation in circuits with higher voltage requirements.

Maximum Collector Current (IC): 2 A

High collector current rating of 2 A allows the transistor to handle larger current loads in amplifier circuits.

Nominal Transition Frequency (fT): 75 MHz

High nominal transition frequency of 75 MHz indicates the transistor's ability to function effectively at higher frequencies, ideal for amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS651RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS651RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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