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MPS6652G

Onsemi

MPS6652G by Onsemi

MPS6652G by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation and hFE of 30. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 34,000 parts In-Stock

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Vyrian

USA . 12,396 parts In-Stock

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Digiode

USA . 482 parts In-Stock

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482

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AZTECH Wire

Italy . 481 parts In-Stock

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$16.720

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Component Stockers USA

USA . 225 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Problanco Electronics

Mexico . 8,262 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,433 parts In-Stock

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Kulean Microsystems

USA . 5,679 parts In-Stock

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TANS Electronics

Latvia . 5,123 parts In-Stock

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SupplyDigital Components

Austria . 413 parts In-Stock

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UHIMA Technologies

Türkiye . 311 parts In-Stock

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Corohmni

South Africa . 212 parts In-Stock

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Corphita

USA . 161 parts In-Stock

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Overview

Enhance your electronic projects with the MPS6652G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for amplification. Manufactured by Onsemi, a trusted name in the industry known for their precision and reliability, this PNP transistor offers exceptional performance and durability. Whether you're working on amplifiers, signal processing circuits, or other applications, the MPS6652G provides superior power dissipation, low DC current gain, and fast turn-on/off times. Upgrade your projects today with this versatile transistor that guarantees optimal functionality and value for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability of the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration is commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use in various projects.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40 V allows this transistor to be used in circuits with higher voltages.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency of 100 MHz enables this transistor to operate effectively in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS6652G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

75 ns

Maximum Turn On Time (ton):

280 ns

Trade Compliance

MPS6652G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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