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MPSW92RLRAG

Onsemi

MPSW92RLRAG by Onsemi

MPSW92RLRAG by Onsemi is a PNP BJT with 1W power dissipation, 300V max. collector-emitter voltage, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low collector current of 0.5A. The through-hole package with bottom terminal position makes it easy to integrate into various circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 10,802 parts In-Stock

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Chip Stock

USA . 5,180 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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ComSIT USA

USA . 3,000 parts In-Stock

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Bristol Electronics

USA . 1,000 parts In-Stock

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Digiode

USA . 473 parts In-Stock

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AZTECH Wire

Italy . 202 parts In-Stock

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Kepictronics

USA . 14,000 parts In-Stock

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Problanco Electronics

Mexico . 7,228 parts In-Stock

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Kulean Microsystems

USA . 5,788 parts In-Stock

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Perfect Parts

USA . 5,462 parts In-Stock

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SupplyDigital Components

Austria . 4,574 parts In-Stock

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TANS Electronics

Latvia . 1,770 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,740 parts In-Stock

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Corphita

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Corohmni

South Africa . 461 parts In-Stock

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UHIMA Technologies

Türkiye . 295 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MPSW92RLRAG PNP transistor from Onsemi. This small signal bipolar junction transistor offers reliability and efficiency, making it perfect for a wide range of applications. Whether you're working on amplifiers, switches, or other circuit designs, this single configuration transistor provides exceptional performance with a maximum collector-emitter voltage of 300V and a maximum power dissipation of 1W. Trust Onsemi's reputation for excellence and choose the MPSW92RLRAG for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits.

Configuration: SINGLE

Simplified circuit design and implementation.

Package Shape: ROUND

Easier to handle and place on a PCB.

Terminal Form: THROUGH-HOLE

Suitable for through-hole soldering, ensuring a secure connection.

Maximum Power Dissipation (Abs): 1 W

Capable of handling moderate power levels in various applications.

Package Style (Meter): CYLINDRICAL

Compact design for space-saving on the PCB.

Minimum DC Current Gain (hFE): 25

Ensures consistent amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high-temperature environments, making it versatile in different applications.

Maximum Collector-Emitter Voltage: 300 V

Allows for handling of higher voltages in the circuit.

Transistor Element Material: SILICON

Provides reliable and stable performance over time.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels in the circuit.

Terminal Finish: TIN SILVER COPPER

Ensures good electrical conductivity and corrosion resistance.

Terminal Position: BOTTOM

Facilitates easy insertion and soldering on the PCB.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 50 MHz

Enables fast switching speeds and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW92RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW92RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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