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BC850CLT1G

Onsemi

BC850CLT1G by Onsemi

BC850CLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 420, and fT of 100MHz. It is used in small signal applications due to its low power dissipation (0.3W), high collector-emitter voltage (45V), and compact gull wing package design.

Median Price

$0.028

Lifecycle Status

Suppliers In-Stock

35

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 450 parts In-Stock

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$0.033

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Newark

USA . 3 parts In-Stock

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$0.124

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$0.049

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$0.032

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$0.124

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Mouser Electronics

USA . 7,154 parts In-Stock

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$0.230

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$0.052

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7,154

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$0.052

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Rochester

USA . 855,013 parts In-Stock

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DigiKey

USA . 855,013 parts In-Stock

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Verical

USA . 783,013 parts In-Stock

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Canada . 489,000 parts In-Stock

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Arrow

USA . 408,000 parts In-Stock

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Master Electronics

USA . 66,000 parts In-Stock

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Chip1Stop

Japan . 11,119 parts In-Stock

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Farnell

UK . 5,522 parts In-Stock

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Element14

Singapore . 5,522 parts In-Stock

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RS (Exports)

UK . 400 parts In-Stock

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Digiode

USA . 2,390 parts In-Stock

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Nova Conductors

Japan . 42 parts In-Stock

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Maritex

Poland . 27,000 parts In-Stock

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TME

Poland . 6,830 parts In-Stock

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IBS Electronics

USA . 1,357,177 parts In-Stock

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Component Electronics Inc.

Canada . 30,490 parts In-Stock

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NAC Semi

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Chip Stock

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LIBRA Elektronik GmbH

Germany . 63,759 parts In-Stock

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Bristol Electronics

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ComSIT Distribution GmbH

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Micros sp.j. W. Kędra i J. Lic

Poland . 12,000 parts In-Stock

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ComSIT USA

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Vyrian

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ACDS - Activité Composants Distribution Service

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Corohmni

South Africa . 320 parts In-Stock

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Ampacity Inc.

Singapore . 186,721 parts In-Stock

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Semicontronic

India . 118,102 parts In-Stock

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Corphita

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Argo Parts USA

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Netroflash

USA . 100 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,385 parts In-Stock

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Perfect Parts

USA . 5,325,419 parts In-Stock

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Continental Prestige Electronics

USA . 906,000 parts In-Stock

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Authorized Procurement Solutions

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Infinite Electronics LLP (Excess)

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Eastek

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Glotronic Ltd.

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S.R.D Solutions

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Futuretech Components

Singapore . 14,980 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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TANS Electronics

Latvia . 7,345 parts In-Stock

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,692 parts In-Stock

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SupplyDigital Components

Austria . 3,611 parts In-Stock

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Alle Elektronik GmbH

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Kulean Microsystems

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Cyclops Electronics Ltd (Excess)

UK . 2,863 parts In-Stock

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Computer Components Inc. - USA

USA . 2,454 parts In-Stock

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Allen Electronics Distributors

USA . 2,200 parts In-Stock

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Problanco Electronics

Mexico . 342 parts In-Stock

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UHIMA Technologies

Türkiye . 160 parts In-Stock

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Overview

Enhance your electronic projects with the BC850CLT1G by Onsemi! This high-quality NPN transistor offers reliable performance and versatility for a wide range of applications. Manufactured by Onsemi, a trusted industry leader, this single configuration transistor is designed for surface mount applications, making it easy to integrate into your designs. With a minimum DC current gain of 420 and a maximum collector-emitter voltage of 45V, this transistor delivers powerful results while maximizing efficiency. Don't compromise on quality - choose the BC850CLT1G for your next project and experience the benefits of superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the transistor from external elements, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Maximum VCEsat: 0.6 V

Low VCEsat helps in reducing power loss and improving efficiency in applications.

Package Shape: RECTANGULAR

Compact shape enables space-saving on the PCB and facilitates efficient layout design.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections during assembly and operation.

No. of Terminals: 3

A simple 3-terminal design that is easy to handle and integrate into circuits.

Maximum Power Dissipation (Abs): 0.3 W

Good power dissipation capability for handling moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB while providing efficient heat dissipation.

Minimum DC Current Gain (hFE): 420

High DC current gain ensures optimal amplification and signal control in various applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in diverse environmental conditions.

Maximum Collector-Base Capacitance: 4.5 pF

Low capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

Safe operating voltage range for many low to medium voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance, reliability, and compatibility with modern electronics.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions without performance degradation.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for low-power applications, offering flexibility in design.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and ensures stable electrical connections.

Terminal Position: DUAL

Dual terminal position enhances stability and ensures secure mounting on the PCB.

Maximum Time At Peak Reflow Temperature (s): 40

Ensures that the transistor can withstand reflow soldering process without damage or degradation.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for robust soldering process and reliability.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC850CLT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC850CLT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-615-9258, 5961016159258

NIIN

016159258

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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