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2N5089RLRAG

Onsemi

2N5089RLRAG by Onsemi

2N5089RLRAG by Onsemi is a NPN BJT transistor with hFE of 400, VCE of 25V, and IC of 0.05A. Ideal for amplifier applications due to its high transition frequency of 50MHz and max power dissipation of 0.35W in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 10,275 parts In-Stock

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Digiode

USA . 1,360 parts In-Stock

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1,360

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Distributors (Availability)

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AZTECH Wire

Italy . 792 parts In-Stock

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$11.660

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792

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Native Components

USA . 330 parts In-Stock

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$57.043

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$54.761

330

$57.043

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$54.761

Northwest PG Solutions

USA . 662 parts In-Stock

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$62.747

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662

$62.747

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SupplyDigital Components

Austria . 7,674 parts In-Stock

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Kulean Microsystems

USA . 6,395 parts In-Stock

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6,395

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Problanco Electronics

Mexico . 4,456 parts In-Stock

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TANS Electronics

Latvia . 4,259 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Corphita

USA . 1,435 parts In-Stock

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1,435

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Corohmni

South Africa . 365 parts In-Stock

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UHIMA Technologies

Türkiye . 286 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality 2N5089RLRAG Small Signal Bipolar Junction Transistor by Onsemi. With a focus on innovation and precision, Onsemi ensures top-notch performance and reliability in all their products. Ideal for amplifier applications, this NPN transistor offers exceptional power dissipation, high DC current gain, and a wide operating temperature range. Upgrade your designs with the 2N5089RLRAG and experience superior functionality and efficiency that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and protection for the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits and offer good performance.

Configuration: SINGLE

Singe configuration simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications for optimal performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections.

Maximum Power Dissipation: 0.35 W

Can handle moderate power levels efficiently without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low voltage applications without risk of breakdown.

Minimum DC Current Gain (hFE): 400

High minimum DC current gain ensures consistent and reliable amplification.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate collector currents for various applications.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5089RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

400

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5089RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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