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NSBC124EPDXV6T1

Onsemi

NSBC124EPDXV6T1 by Onsemi

NSBC124EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and max collector-emitter voltage of 50V. This transistor is surface mountable in a small outline package, suitable for various electronic circuits requiring low to medium power switching capabilities.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 211,695 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

211,695

-

$0.053

$0.044

$0.039

Avnet

USA . 211,695 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.050

10k+ parts

$0.040

211,695

-

-

$0.050

$0.040

Farnell

UK . 211,695 parts In-Stock

1+ parts

-

100+ parts

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211,695

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Distributors (In-Stock)

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Digiode

USA . 931 parts In-Stock

1+ parts

$0.041

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-

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931

$0.041

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Chip Stock

USA . 71,000 parts In-Stock

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71,000

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Vyrian

USA . 10,197 parts In-Stock

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10,197

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Distributors (Availability)

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Corphita

USA . 689 parts In-Stock

1+ parts

$0.039

100+ parts

-

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689

$0.039

-

-

-

Component Stockers USA

USA . 174,569 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

174,569

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 274 parts In-Stock

1+ parts

$0.043

100+ parts

-

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274

$0.043

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AZTECH Wire

Italy . 826 parts In-Stock

1+ parts

$22.130

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826

$22.130

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Continental Prestige Electronics

USA . 211,695 parts In-Stock

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$0.039

211,695

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$0.039

Authorized Procurement Solutions

USA . 40,000 parts In-Stock

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40,000

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TANS Electronics

Latvia . 7,709 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,287 parts In-Stock

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6,287

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A-Z Elektronik GmbH

Germany . 5,070 parts In-Stock

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5,070

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Kulean Microsystems

USA . 4,480 parts In-Stock

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4,480

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SupplyDigital Components

Austria . 1,798 parts In-Stock

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1,798

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Problanco Electronics

Mexico . 638 parts In-Stock

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638

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UHIMA Technologies

Türkiye . 445 parts In-Stock

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445

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Overview

Unlock the potential of your electronic projects with the NSBC124EPDXV6T1 by Onsemi. Manufactured by a trusted industry leader, this small signal bipolar junction transistor offers unparalleled quality and reliability. Ideal for switching applications, this versatile component features separate NPN and PNP elements with built-in resistors in a convenient surface-mount package. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 60, this transistor delivers exceptional performance while maximizing power dissipation at 0.5W. Trust Onsemi to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for versatile usage and convenient integration into various circuit designs, especially for applications requiring resistors.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and high efficiency, making it suitable for use in electronic devices.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels without overheating, providing reliability in operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in environments with elevated heat levels.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications where a higher voltage handling capability is required, providing flexibility in circuit design.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for various electronic applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC124EPDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC124EPDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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