Loading...

NSBC143EDXV6T1

Onsemi

NSBC143EDXV6T1 by Onsemi

NSBC143EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a small outline package style and can handle up to 0.1A collector current.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 39,975 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

-

39,975

$0.040

$0.040

$0.040

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,070 parts In-Stock

1+ parts

$0.038

100+ parts

-

1k+ parts

-

10k+ parts

-

2,070

$0.038

-

-

-

Chip Stock

USA . 28,136 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28,136

-

-

-

-

Vyrian

USA . 3,931 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,931

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,464 parts In-Stock

1+ parts

$0.036

100+ parts

-

1k+ parts

-

10k+ parts

-

2,464

$0.036

-

-

-

Corohmni

South Africa . 433 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

-

433

$0.040

-

-

-

AZTECH Wire

Italy . 497 parts In-Stock

1+ parts

$9.140

100+ parts

-

1k+ parts

-

10k+ parts

-

497

$9.140

-

-

-

Component Stockers USA

USA . 645 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

645

$99.990

-

-

-

Problanco Electronics

Mexico . 5,322 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,322

-

-

-

-

SupplyDigital Components

Austria . 4,219 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,219

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

TANS Electronics

Latvia . 1,306 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,306

-

-

-

-

UHIMA Technologies

Türkiye . 814 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

814

-

-

-

-

Kulean Microsystems

USA . 555 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

555

-

-

-

-

Perfect Parts

USA . 269 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

269

-

-

-

-

Overview

Unlock the power of innovation with the NSBC143EDXV6T1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that offer unmatched performance and reliability. Ideal for switching applications, this NPN transistor features a compact rectangular package with built-in resistors, making it suitable for a wide range of electronic devices. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 15, this transistor provides exceptional value and efficiency to our customers. Upgrade your technology with Onsemi and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Provides versatility for different circuit designs and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuit designs, and the built-in resistor simplifies the overall design.

Transistor Application: SWITCHING

Ideal for switching applications, offering fast response times and high efficiency.

Surface Mount: YES

Ensures easy and efficient assembly onto circuit boards.

Package Shape: RECTANGULAR

Saves space and allows for compact circuit designs.

No. of Elements: 2

Provides flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels, suitable for many applications.

Minimum DC Current Gain (hFE): 15

Ensures reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Allows for operation in circuits with higher voltage levels.

Transistor Element Material: SILICON

Provides high performance and reliability.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels in a circuit.

Terminal Finish: TIN

Provides good conductivity and solderability for easy integration into circuits.

Terminal Position: DUAL

Facilitates easy connection in circuit designs.

Peak Reflow Temperature °C: 260

Ensures reliable performance during soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC143EDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC143EDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20