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NSBA123JDXV6T1

Onsemi

NSBA123JDXV6T1 by Onsemi

NSBA123JDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features small outline package, flat terminals, and peak reflow temp of 260 °C.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 164,737 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

164,737

-

$0.053

$0.044

$0.039

DigiKey

USA . 164,737 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.070

164,737

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$0.070

Farnell

UK . 164,737 parts In-Stock

1+ parts

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164,737

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Verical

USA . 164,737 parts In-Stock

1+ parts

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$0.049

164,737

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$0.049

Distributors (In-Stock)

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Digiode

USA . 2,269 parts In-Stock

1+ parts

$0.041

100+ parts

-

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2,269

$0.041

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DigiKey Marketplace

USA . 164,737 parts In-Stock

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164,737

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Chip Stock

USA . 29,000 parts In-Stock

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Vyrian

USA . 12,546 parts In-Stock

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12,546

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Distributors (Availability)

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Corphita

USA . 135 parts In-Stock

1+ parts

$0.039

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-

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135

$0.039

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Corohmni

South Africa . 266 parts In-Stock

1+ parts

$0.043

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266

$0.043

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.701

100+ parts

$0.638

1k+ parts

$0.575

10k+ parts

-

5,000

$0.701

$0.638

$0.575

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AZTECH Wire

Italy . 1,104 parts In-Stock

1+ parts

$20.730

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$20.730

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Continental Prestige Electronics

USA . 164,737 parts In-Stock

1+ parts

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$0.039

164,737

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$0.039

Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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TANS Electronics

Latvia . 5,664 parts In-Stock

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Problanco Electronics

Mexico . 2,379 parts In-Stock

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2,379

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SupplyDigital Components

Austria . 2,243 parts In-Stock

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UHIMA Technologies

Türkiye . 378 parts In-Stock

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378

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Kulean Microsystems

USA . 39 parts In-Stock

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Overview

Upgrade your electronics with the NSBA123JDXV6T1 by Onsemi! Manufactured by industry leader Onsemi, this small signal bipolar junction transistor offers unparalleled quality and performance. Ideal for switching applications, this PNP transistor with built-in resistor features a compact rectangular package design that is surface mountable. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 80, this transistor is perfect for a wide range of electronic projects. Get yours today and experience the reliable performance and value that Onsemi products are known for!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

This transistor is PNP type, which is commonly used in switching applications and can provide good performance in such scenarios.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having a built-in resistor simplifies circuit design and saves space, making it a convenient choice for applications that require resistors.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can switch between on and off states efficiently and effectively.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on PCBs, making it suitable for mass production and compact designs.

Package Shape: RECTANGULAR

The rectangular shape is a common and practical design for easy integration into circuit layouts and PCB designs.

Terminal Form: FLAT

Flat terminals provide a secure and stable connection, ensuring reliable performance in various applications.

No. of Elements: 2

Having 2 elements allows for more versatility in circuit design, enabling more complex functions to be achieved.

No. of Terminals: 6

With 6 terminals, this transistor offers more connectivity options and flexibility in circuit connections.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels without overheating or damaging the device.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact designs and applications with limited space.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures consistent and reliable amplification of current in the circuit, providing stable performance.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle moderate voltage levels, suitable for various applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency in transistor technology, ensuring high performance.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, making it suitable for various switching applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring stable connections and performance over time.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit connections and layout, enabling various configurations.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes, ensuring reliable assembly on PCBs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA123JDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.047

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA123JDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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