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NSBC144EPDXV6T1

Onsemi

NSBC144EPDXV6T1 by Onsemi

NSBC144EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. Ideal for switching applications in compact designs due to its small outline package shape and surface-mount capability.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 26,000 parts In-Stock

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Bristol Electronics

USA . 6,000 parts In-Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 220 parts In-Stock

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SupplyDigital Components

Austria . 7,585 parts In-Stock

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TANS Electronics

Latvia . 6,871 parts In-Stock

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Kulean Microsystems

USA . 5,835 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,658 parts In-Stock

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Problanco Electronics

Mexico . 1,299 parts In-Stock

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UHIMA Technologies

Türkiye . 977 parts In-Stock

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Corphita

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Overview

Unlock the power of seamless switching with the NSBC144EPDXV6T1 by Onsemi. As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers quality and reliability in every product. Ideal for a wide range of applications, this NPN and PNP transistor offers dual elements with built-in resistors for improved performance. With a maximum collector-emitter voltage of 50 V and a compact package style, this transistor provides superior efficiency and durability. Upgrade your circuit design with Onsemi's NSBC144EPDXV6T1 and experience the difference in performance and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the transistor from external elements, making it suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for flexibility in circuit design and enables compatibility with different types of electronic components.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB by eliminating the need for an external component.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient switching between on and off states.

Surface Mount: YES

Being surface mount compatible makes this transistor easy to integrate into modern PCB designs, saving space and simplifying the assembly process.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 indicates that this transistor provides high amplification capabilities, enhancing its performance in signal amplification applications.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows this transistor to handle higher voltage levels, expanding its range of potential applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can effectively handle moderate current levels, making it suitable for various circuit requirements.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and solderability, ensuring reliable connections and facilitating the assembly process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC144EPDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC144EPDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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