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NSBA143ZDXV6T1

Onsemi

NSBA143ZDXV6T1 by Onsemi

NSBA143ZDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. This small outline transistor in plastic/epoxy package is surface mountable, making it suitable for compact electronic designs.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 43,990 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

43,990

-

$0.053

$0.044

$0.039

DigiKey

USA . 43,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

43,990

-

-

-

$0.070

Verical

USA . 43,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

43,990

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,406 parts In-Stock

1+ parts

$0.041

100+ parts

-

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-

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2,406

$0.041

-

-

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Vyrian

USA . 11,199 parts In-Stock

1+ parts

-

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11,199

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,189 parts In-Stock

1+ parts

$0.039

100+ parts

-

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-

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-

1,189

$0.039

-

-

-

Corohmni

South Africa . 377 parts In-Stock

1+ parts

$0.043

100+ parts

-

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-

377

$0.043

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.147

100+ parts

$1.044

1k+ parts

$0.941

10k+ parts

-

500

$1.147

$1.044

$0.941

-

AZTECH Wire

Italy . 169 parts In-Stock

1+ parts

$15.770

100+ parts

-

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169

$15.770

-

-

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Continental Prestige Electronics

USA . 43,990 parts In-Stock

1+ parts

-

100+ parts

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$0.039

43,990

-

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$0.039

Kulean Microsystems

USA . 6,833 parts In-Stock

1+ parts

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6,833

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Problanco Electronics

Mexico . 5,282 parts In-Stock

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5,282

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TANS Electronics

Latvia . 4,723 parts In-Stock

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4,723

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UHIMA Technologies

Türkiye . 524 parts In-Stock

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524

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SupplyDigital Components

Austria . 41 parts In-Stock

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41

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Overview

Discover the NSBA143ZDXV6T1 by Onsemi, a top-quality small signal bipolar junction transistor perfect for switching applications. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor offers reliability and efficiency. With a package body material of PLASTIC/EPOXY and a maximum power dissipation of 0.5 W, this transistor is designed for optimal performance. Whether you're a hobbyist or a professional, this product's built-in resistor and dual elements make it a versatile choice for a wide range of projects. Upgrade your electronics with the NSBA143ZDXV6T1 and experience the superior quality and value that Onsemi delivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits and helps in achieving desired switching functionality.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and allows for more efficient switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it a reliable choice for various electronic devices.

Surface Mount: YES

Surface mount capability facilitates easy installation and integration into compact electronic systems.

Maximum Power Dissipation (Abs): 0.5 W

With a power dissipation of 0.5W, this transistor can handle moderate power levels effectively.

Minimum DC Current Gain (hFE): 80

High DC current gain (hFE) of 80 ensures consistent and reliable amplification of signals.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage of 50V allows for operation in a wide range of voltage levels.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels for switching applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance for reliable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA143ZDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA143ZDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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