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NSBA123EDXV6T1

Onsemi

NSBA123EDXV6T1 by Onsemi

NSBA123EDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of min. 8. It's used for switching applications with max. VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with flat terminals, suitable for surface mount assembly at peak reflow temp of 260 °C within 30s.

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1k+

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USA . 1,757 parts In-Stock

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AZTECH Wire

Italy . 727 parts In-Stock

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Component Stockers USA

USA . 762 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,857 parts In-Stock

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Kulean Microsystems

USA . 7,008 parts In-Stock

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Problanco Electronics

Mexico . 5,500 parts In-Stock

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TANS Electronics

Latvia . 3,620 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 258 parts In-Stock

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Overview

Unlock the power of seamless switching with the NSBA123EDXV6T1 by Onsemi! Crafted with precision and expertise, this PNP bipolar junction transistor offers unparalleled quality and reliability. Ideal for a wide range of applications, this small signal BJT is designed to optimize performance while ensuring efficient power dissipation. With built-in resistors and a compact package shape, this transistor delivers superior functionality in a sleek design. Experience the value and benefits of advanced technology with the NSBA123EDXV6T1 - the perfect choice for your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material that helps in reducing overall weight of the product.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Provides flexibility in circuit design and includes built-in resistor for ease of use.

Transistor Application: SWITCHING

Ideal for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Enables easy and quick mounting on a PCB, saving time during assembly.

Package Shape: RECTANGULAR

Space-efficient design for better utilization of PCB area.

Terminal Form: FLAT

Simplifies soldering process and ensures secure connection.

No. of Elements: 2

Provides dual functionality in a single component, reducing the need for multiple parts.

No. of Terminals: 6

Offers more connection options, enhancing compatibility with various circuits.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power levels without overheating, ensuring reliability.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 8

Ensures consistent and reliable amplification in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Can withstand high voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based material provides good performance and reliability.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for many applications.

Terminal Finish: TIN

Provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Allows for easy and secure connection to the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand reflow soldering process without damage.

Peak Reflow Temperature °C: 260

Suitable for lead-free soldering processes, ensuring compliance with industry standards.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA123EDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA123EDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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