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BC847BV-7

Diodes Incorporated

BC847BV-7 by Diodes Incorporated

BC847BV-7 by Diodes Inc. is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for small signal applications in electronics due to its high transition frequency of 100MHz, low power dissipation of 0.15W, and compact small outline package design. Suitable for surface mount PCBs requiring dual terminal configuration with matte tin finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 18,280 parts In-Stock

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Chip Stock

USA . 6,722 parts In-Stock

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6,722

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VNN

France . 3,089 parts In-Stock

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3,089

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Prism Electronics

USA . 343 parts In-Stock

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343

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 629 parts In-Stock

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$0.634

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629

$0.634

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Advanced Electronics

New Zealand . 10 parts In-Stock

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$1.329

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$1.262

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$1.262

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10

$1.329

$1.262

$1.262

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Aztec Data Supply Inc.

USA . 4,009 parts In-Stock

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$1.650

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4,009

$1.650

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Semicontronic

India . 162 parts In-Stock

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$12.050

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$11.749

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$11.688

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162

$12.050

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$11.688

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AZTECH Wire

Italy . 751 parts In-Stock

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$19.331

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751

$19.331

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Ampacity Inc.

Singapore . 1,371 parts In-Stock

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$56.050

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Perfect Parts

USA . 97,654 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,308 parts In-Stock

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Continental Prestige Electronics

USA . 3,708 parts In-Stock

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Argo Parts USA

USA . 2,755 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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900

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Lucentia Tech

USA . 900 parts In-Stock

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$5.587

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$5.587

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$5.587

900

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$5.587

$5.587

$5.587

Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Boost your electronic projects with the BC847BV-7 by Diodes Incorporated! Crafted with top-notch quality and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers exceptional performance and reliability. Ideal for a wide range of applications, this NPN transistor boasts a compact design and high DC current gain, making it perfect for amplification and switching tasks. Experience seamless integration and superior functionality with the BC847BV-7 - your go-to choice for premium components that deliver unbeatable value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components of the transistor, making it long-lasting and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high performance and efficiency.

Configuration: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for more flexibility in circuit design and applications.

Surface Mount: YES

Surface mount capability makes installation and soldering easier, saving time and effort during assembly.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15 W, this transistor can handle moderate power levels and operate efficiently without overheating.

Maximum Operating Temperature: 150 °C

Operating at a maximum temperature of 150°C ensures stable performance even in high-temperature environments.

Maximum Collector-Emitter Voltage: 45 V

With a maximum collector-emitter voltage of 45 V, this transistor can withstand higher voltage applications with ease.

Minimum DC Current Gain (hFE): 200

Having a minimum DC current gain of 200 ensures high amplification capability and accuracy in signal processing.

Nominal Transition Frequency (fT): 100 MHz

With a high nominal transition frequency of 100 MHz, this transistor is suitable for high-frequency applications, including RF circuits and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BV-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847BV-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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