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EMG5DXV5T1

Onsemi

EMG5DXV5T1 by Onsemi

The Onsemi EMG5DXV5T1 is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,516 parts In-Stock

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-

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$0.053

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$0.044

10k+ parts

$0.039

1,516

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$0.053

$0.044

$0.039

Distributors (In-Stock)

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Digiode

USA . 227 parts In-Stock

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$0.041

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227

$0.041

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Chip Stock

USA . 18,000 parts In-Stock

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18,000

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Vyrian

USA . 8,834 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 639 parts In-Stock

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$0.039

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639

$0.039

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Corohmni

South Africa . 245 parts In-Stock

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$0.043

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245

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AZTECH Wire

Italy . 1,039 parts In-Stock

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$14.330

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1,039

$14.330

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Kulean Microsystems

USA . 5,980 parts In-Stock

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TANS Electronics

Latvia . 3,213 parts In-Stock

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Problanco Electronics

Mexico . 1,400 parts In-Stock

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SupplyDigital Components

Austria . 1,399 parts In-Stock

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UHIMA Technologies

Türkiye . 716 parts In-Stock

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Native Components

USA . 361 parts In-Stock

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Northwest PG Solutions

USA . 75 parts In-Stock

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Overview

Unlock the power of innovation with the EMG5DXV5T1 by Onsemi. Crafted with precision and quality, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With a common emitter configuration and built-in resistor, this NPN transistor delivers reliability and efficiency. Its compact size and surface mount capability make it ideal for a wide range of electronic devices. Trust Onsemi's expertise in semiconductor technology to bring you a product that exceeds expectations. Elevate your projects with the EMG5DXV5T1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile, making them suitable for a wide range of applications.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and can help save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation in such scenarios.

Surface Mount: YES

Allows for easy and efficient PCB assembly, ideal for mass production.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to handle and mount in various electronic devices.

Terminal Form: FLAT

Flat terminals provide a secure and stable connection, reducing the risk of loose connections.

No. of Elements: 2

Having 2 elements allows for more flexibility in circuit design and functionality.

Maximum Power Dissipation (Abs): 0.338 W

Can handle a relatively high power dissipation, suitable for a range of applications.

Minimum DC Current Gain (hFE): 80

A high DC current gain ensures reliable and consistent performance in amplification applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for compatibility with various voltage levels.

Transistor Element Material: SILICON

Silicon transistors are known for their superior performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many common applications where high current is not required.

Terminal Finish: TIN

Tin terminal finish is cost-effective and provides good solderability for assembly.

Terminal Position: DUAL

Dual terminal position allows for easier PCB layout and connection of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high reflow temperatures for a short duration during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures reliable solder connections during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMG5DXV5T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMG5DXV5T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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