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EMG5T2R

ROHM

EMG5T2R by ROHM

ROHM's EMG5T2R is a NPN BJT with 2 elements, built-in resistor, and hFE of 68. It operates at max 150°C, VCE of 50V, and IC of 0.1A. Ideal for switching applications with a transition frequency of 250MHz in a small outline package.

Median Price

$0.524

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Chip1Stop

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$0.540

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Master Electronics

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Bristol Electronics

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$0.095

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$0.071

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CoreStaff

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Advanced Electronics

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Overview

Discover the quality and reliability of the ROHM EMG5T2R small signal bipolar junction transistor. With a common emitter configuration and two elements with built-in resistors, this NPN transistor is perfect for switching applications. Its compact rectangular package makes it easy to mount on any surface. Offering a maximum collector-emitter voltage of 50V and a minimum DC current gain of 68, this transistor provides exceptional performance. Trust in ROHM's reputation for excellence and unlock the potential of your electronic projects with the EMG5T2R.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, making it versatile and widely compatible.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Easily mountable on PCBs, saving assembly time and reducing overall size of the circuit.

Maximum Power Dissipation: 0.15 W

Able to handle moderate power levels without overheating, ensuring reliability under normal operating conditions.

Nominal Transition Frequency: 250 MHz

Capable of switching at high frequencies, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMG5T2R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMG5T2R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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