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EMG5DXV5T5G

Onsemi

EMG5DXV5T5G by Onsemi

The Onsemi EMG5DXV5T5G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, common emitter configuration, and is used for switching applications. This surface-mount device comes in a small outline package with 5 terminals and can handle up to 0.1A collector current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,034 parts In-Stock

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Digiode

USA . 1,325 parts In-Stock

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Native Components

USA . 339 parts In-Stock

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$4.950

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SupplyDigital Components

Austria . 8,314 parts In-Stock

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TANS Electronics

Latvia . 6,537 parts In-Stock

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Kulean Microsystems

USA . 4,602 parts In-Stock

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Corphita

USA . 1,741 parts In-Stock

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Problanco Electronics

Mexico . 975 parts In-Stock

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Northwest PG Solutions

USA . 842 parts In-Stock

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UHIMA Technologies

Türkiye . 350 parts In-Stock

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Corohmni

South Africa . 204 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the EMG5DXV5T5G by Onsemi. Crafted with precision and expertise, this small signal bipolar junction transistor offers exceptional performance in switching applications. With a common emitter configuration and built-in resistor, this NPN transistor provides reliability and efficiency like no other. Whether you're a hobbyist or a professional, the EMG5DXV5T5G delivers unrivaled value and benefits, making it the perfect choice for all your circuit needs. Trust Onsemi for quality components that elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Allows for easy integration into circuits that require NPN transistors.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Simplifies circuit design by having built-in resistor elements for common emitter configuration.

Transistor Application: SWITCHING

Ideal for applications that require high-speed switching capabilities.

Surface Mount: YES

Enables easy and efficient assembly onto circuit boards.

Maximum Power Dissipation (Abs): 0.338 W

Can handle power dissipation up to 0.338 W, making it suitable for various applications.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures stable and reliable performance in circuits.

Maximum Collector-Emitter Voltage: 50 V

Allows for operation under voltages up to 50 V, suitable for many applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling collector currents up to 0.1 A, making it versatile for different circuit requirements.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures of up to 260 °C during assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMG5DXV5T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMG5DXV5T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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