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EMG5DXV5T1G

Onsemi

EMG5DXV5T1G by Onsemi

The Onsemi EMG5DXV5T1G is a NPN BJT transistor with common emitter configuration and built-in resistor. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 80. Ideal for switching applications in surface mount designs due to its small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,517 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 4,501 parts In-Stock

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TANS Electronics

Latvia . 4,195 parts In-Stock

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Problanco Electronics

Mexico . 2,482 parts In-Stock

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Corphita

USA . 2,425 parts In-Stock

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Northwest PG Solutions

USA . 2,140 parts In-Stock

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Kulean Microsystems

USA . 1,702 parts In-Stock

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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Corohmni

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Overview

Experience the next level of performance with the EMG5DXV5T1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that are perfect for switching applications. This NPN transistor boasts a common emitter configuration with built-in resistors, making it a versatile and reliable choice. With its high DC current gain and maximum collector-emitter voltage, this transistor offers unmatched value and benefits to customers looking for a compact and efficient solution. Upgrade your electronics with the EMG5DXV5T1G and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, enhancing its overall performance and longevity.

Polarity or Channel Type: NPN

NPN polarity ensures compatibility with a wide range of electronic devices and circuits, making it versatile for various applications.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

The common emitter configuration with built-in resistor simplifies circuit design and saves space while ensuring efficient signal amplification.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and reliable performance in switching circuits.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 0.338 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 80

The high minimum DC current gain ensures stable and consistent amplification of input signals, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage requirements, increasing its versatility.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 A of collector current, this transistor is suitable for low to moderate current applications, providing reliable performance.

Terminal Finish: TIN

Tin terminal finish ensures good conductivity and solderability, making it easy to mount and secure the transistor in place.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMG5DXV5T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMG5DXV5T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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