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EMZ1DXV6T5

Onsemi

EMZ1DXV6T5 by Onsemi

The Onsemi EMZ1DXV6T5 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max VCE of 60V and IC of 0.1A.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 272,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

272,000

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,265 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

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-

1,265

$0.041

-

-

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Vyrian

USA . 5,678 parts In-Stock

1+ parts

-

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5,678

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,982 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,982

$0.039

-

-

-

Corohmni

South Africa . 226 parts In-Stock

1+ parts

$0.043

100+ parts

-

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-

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226

$0.043

-

-

-

AZTECH Wire

Italy . 573 parts In-Stock

1+ parts

$22.180

100+ parts

-

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573

$22.180

-

-

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Native Components

USA . 567 parts In-Stock

1+ parts

$53.440

100+ parts

-

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10k+ parts

$51.302

567

$53.440

-

-

$51.302

Northwest PG Solutions

USA . 626 parts In-Stock

1+ parts

$58.784

100+ parts

-

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626

$58.784

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Continental Prestige Electronics

USA . 272,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.044

272,000

-

-

-

$0.044

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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5,000

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SupplyDigital Components

Austria . 1,670 parts In-Stock

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1,670

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Problanco Electronics

Mexico . 1,327 parts In-Stock

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1,327

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TANS Electronics

Latvia . 1,098 parts In-Stock

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1,098

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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242

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Kulean Microsystems

USA . 99 parts In-Stock

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99

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Overview

Enhance your electronic projects with the EMZ1DXV6T5 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled quality and reliability. Ideal for amplifier applications, its NPN and PNP configuration provides flexibility and efficiency. With a maximum operating temperature of 150 °C and a nominal transition frequency of 180 MHz, this transistor guarantees optimal performance. Trust in Onsemi's reputation for excellence and elevate your designs with the EMZ1DXV6T5 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Versatility in applications, can be used in both NPN and PNP configurations.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance.

Maximum Power Dissipation (Abs): 0.5 W

Can handle up to 0.5W of power dissipation, suitable for small signal amplification.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring up to 60V collector-emitter voltage.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures efficient amplification of small signals.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency allows for high-speed signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMZ1DXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

EMZ1DXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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